Pb Free Plating Product
ISSUED DATE :2004/03/03
REVISED DATE :2005/10/19C
GJ60N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
16.5m
55A
The GJ60N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Description
Features
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
Tj, Tstg
Ratings
30
±20
55
35
215
62.5
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.0
110
Unit
:
/W
: /W
GJ60N03
Page: 1/5
ISSUED DATE :2004/03/03
REVISED DATE :2005/10/19C
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
30
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.037
-
30
-
-
-
14.5
21.5
22.4
2.7
14
7.4
81
24
18
950
440
145
Max.
-
-
3.0
-
±100
25
250
16.5
25
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=28A
V
GS
= ±20V
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0
V
GS
=10V, I
D
=28A
V
GS
=4.5V, I
D
=22A
I
D
=28A
V
DS
=24V
V
GS
=5V
V
DS
=15V
I
D
=28A
V
GS
=10V
R
G
=3.3
R
D
=0.53
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150 :
)
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Continuous Source Current (
Body Diode
)
Pulsed Source Current (
Body Diode
)
1
Symbol
V
SD
I
S
I
SM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
55
215
Unit
V
A
A
Test Conditions
I
S
=55A, V
GS
=0V, Tj=25 :
V
D
= V
G
=0V, V
S
=1.3V
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ60N03
Page: 2/5
ISSUED DATE :2004/03/03
REVISED DATE :2005/10/19C
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ60N03
Fig 6. Type Power Dissipation
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ISSUED DATE :2004/03/03
REVISED DATE :2005/10/19C
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GJ60N03
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page: 4/5
ISSUED DATE :2004/03/03
REVISED DATE :2005/10/19C
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ60N03
Page: 5/5
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