NTE347
Silicon NPN Transistor
RF Power Output
P
O
= 3W @ 175MHz
Description:
The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in mili-
tary and industrial equipment operating to 240MHz.
Features:
D
Low lead inductance stripline package for easier design and increased broadband capability.
D
Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed
to withstand an Open or Shorted Load at rated Output Power.
D
Specified 13.6 volt, 175MHz Characteristics−
Output Power = 3.0 Watts
Minimum Gain = 8.2dB
Efficiency = 50%
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector−Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector−Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6A
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65°
to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65°
to +200°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
DYNAMIC CHARACTERISTICS
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0, f = 0.1 to 1.0 MHz
−
15
30
pF
h
FE
I
C
= 100mA, V
CE
= 5.0Vdc
5.0
−
−
−
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)CBO
I
C
= 200mA, I
B
= 0
I
C
= 200mA, I
B
= 0
I
E
= 1.0mA, I
C
= 0
V
CB
= 15V, I
E
= 0
18
36
4.0
−
−
−
−
−
−
−
−
1.0
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max Unit
MCU
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