MMBD6100-T1 datasheet, PDF - EEWORLD Datasheet

MMBD6100-T1: Description0.2 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size32KB，3 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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MMBD6100-T1 Overview

0.2 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Won-Top Electronics Co., Ltd.
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Maximum non-repetitive peak forward current	2 A
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.35 W
Maximum repetitive peak reverse voltage	70 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL

	MMBD6100-T1	MMBD6100
Description	0.2 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

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