1N4454-GT3 datasheet, PDF - EEWORLD Datasheet

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1N4454-GT3: DescriptionRectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2; CategoryDiscrete semiconductor diode; File Size122KB，3 Pages; ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.; Environmental Compliance

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1N4454-GT3 Overview

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2

1N4454-GT3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	O-LALF-W2
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum output current	0.15 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.002 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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SENSITRON

SEMICONDUCTOR

Data Sheet 2774, Rev. -

1N4454

FAST SWITCHING DIODE

Features

Fast Switching Speed

Glass Package Version for High Reliability

High Conductance

Available in Both Through-Hole and Surface

Mount Versions

1N4454

Mechanical Data

Case: DO-35, MiniMELF

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight:

DO-35

0.13 grams

Marking: Cathode Band Only

DO-35

Max

Min

Dim

Min

Max

25.40

—

4.00

—

0.60

—

2.00

in mm

1.000

—

0.157

—

0.024

—

0.079

In inch

Maximum Ratings

=25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Rectified Current (Average), Half Wave Rectification with

Resistive Load and f

≧

50MHz (Note 1)

Non-Repetitive Peak Forward Surge Current

Power Dissipation (Note 1)

Derate Above 25°C

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

@ t = 1.0µs

Symbol

RRM

RWM

R(RMS)

FSM

θJA

, T

STG

Value

200

150

4000

500

300

-65 to +200

Unit

K/W

°C

•

!631

!"#631•

•

World Wide Web Site - http://www.sensitron.com

•

E-Mail Address - sales@sensitron.com

•

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version

of the datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,

medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by

means of users’ fail-safe precautions or other arrangement.

3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during

operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual

property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from

use at a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of

Sensitron Semiconductor.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will

hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third

party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and

regulations.

•

221 West Industry Court

Deer Park, NY 11729-4681

(631) 586-7600 FAX (631) 242-9798

•

World Wide Web - http://www.sensitron.com

•

E-Mail Address - sales@sensitron.com

•

1N4454-GT3 Related Products

	1N4454-GT3	1N4454-T3
Description	Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2	Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2
Is it Rohs certified?	conform to	incompatible
package instruction	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknow	unknow
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-35	DO-35
JESD-30 code	O-LALF-W2	O-LALF-W2
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Maximum output current	0.15 A	0.15 A
Package body material	GLASS	GLASS
Package shape	ROUND	ROUND
Package form	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	75 V	75 V
Maximum reverse recovery time	0.002 µs	0.002 µs
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1

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