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934066475127

Description
54A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size210KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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934066475127 Overview

54A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN

934066475127 Parametric

Parameter NameAttribute value
MakerNXP
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)39 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)54 A
Maximum drain-source on-resistance0.015 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)216 A
GuidelineAEC-Q101; IEC-60134
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

934066475127 Related Products

934066475127 BUK9515-60E,127
Description 54A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN mosfet N-CH 60v 54a to220ab
Maker NXP NXP
Reach Compliance Code unknown not_compliant
Configuration SINGLE WITH BUILT-IN DIODE Single
Maximum drain current (ID) 54 A 54 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Number of components 1 1
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO

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