54A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
Parameter Name | Attribute value |
Maker | NXP |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) | 39 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 54 A |
Maximum drain-source on-resistance | 0.015 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 216 A |
Guideline | AEC-Q101; IEC-60134 |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
934066475127 | BUK9515-60E,127 | |
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Description | 54A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | mosfet N-CH 60v 54a to220ab |
Maker | NXP | NXP |
Reach Compliance Code | unknown | not_compliant |
Configuration | SINGLE WITH BUILT-IN DIODE | Single |
Maximum drain current (ID) | 54 A | 54 A |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Number of components | 1 | 1 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
surface mount | NO | NO |