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71V3578S133BGG8

Description
Standard SRAM, 256KX18, 4.2ns, CMOS, PBGA119
Categorystorage    storage   
File Size622KB,22 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
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71V3578S133BGG8 Overview

Standard SRAM, 256KX18, 4.2ns, CMOS, PBGA119

71V3578S133BGG8 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Reach Compliance Codeunknown
Maximum access time4.2 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee1
memory density4718592 bit
Memory IC TypeSTANDARD SRAM
memory width18
Humidity sensitivity level3
Number of terminals119
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.03 A
Minimum standby current3.14 V
Maximum slew rate0.25 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Base Number Matches1

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