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IRL2703PBF

Description
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size213KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRL2703PBF Overview

24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRL2703PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionLEAD FREE PACKAGE-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)77 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)24 A
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)96 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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