UNISONIC TECHNOLOGIES CO., LTD
2SC5353B
HIGH VOLTAGE NPN
TRANSISTOR
DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications
NPN SILICON TRANSISTOR
FEATURES
* Excellent switching times: t
R
= 0.7μs
(MAX)
, t
F
= 0.5μs
(MAX)
* High collectors breakdown voltage: V
CEO
= 750V
*Pb-free plating product number: 2SC5353BL
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
2SC5353B-T60-K
2SC5353BL-T60-K
2SC5353B-T6C-K
2SC5353BL-T6C-K
2SC5353B-TA3-T
2SC5353BL-TA3-T
2SC5353B-TF3-T
2SC5353BL-TF3-T
Package
TO-126
TO-126C
TO-220
TO-220F
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Bulk
Bulk
Tube
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
NPN SILICON TRANSISTOR
RATINGS
UNIT
Collector-Base Voltage
900
V
Collector-Emitter Voltage
750
V
Emitter-Base Voltage
7
V
DC
3
A
Collector Current
5
Pulse
Base Current
1
A
TO-220F/ TO-126/TO-126C
20
Collector Power Dissipation
P
D
W
TO-220
25
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Tc = 25℃)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
TEST CONDITIONS
I
C
=1 mA, I
E
= 0
I
C
=10 mA, I
B
= 0
V
CB
=720V, I
E
= 0
V
EB
=7V, I
C
= 0
V
CE
=5 V, I
C
=1 mA
V
CE
=5 V, I
C
=0.15 A
I
C
=1.2 A, I
B
=0.24 A
I
C
=1.2 A, I
B
=0.24 A
MIN
900
750
TYP
MAX UNIT
V
V
100
µA
10
µA
10
15
1.0
1.3
V
V
Storage Time
t
STG
I
B2
Switching Time
I
B1
300Ω
Rise Time
t
R
0.7
µS
4.0
Fall Time
t
F
0.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, I
C
(A)
Collector Current, I
C
(A)
DC Current Gain vs. Collector Current
Collector-Emitter Saturation Voltage,
V
CE (SAT)
(V)
1000
10
Collector-Emitter Saturation Voltage vs.
Collector Current
Common emitter
I
C
/I
B
= 3
DC Current Gain, h
FE
100
T
C
=100℃
25
10
-20
Common emitter
V
CE
= 5 V
0.01
0.1
1
Collector Current, I
C
(A)
10
1
T
C
=100℃
25
-20
0.1
1
Collector Current, I
C
(A)
10
0.1
1
0.001
0.05
0.01
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Power Dissipation, P
D
(W)
Collector Current, I
C
(A)
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