2N5486RL datasheet, PDF - EEWORLD Datasheet

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2N5486RL: DescriptionUHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size167KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2N5486RL Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN

2N5486RL Parametric

Parameter Name	Attribute value
Maker	ON Semiconductor
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Manufacturer packaging code	CASE 29-11
Reach Compliance Code	unknown
Other features	EUROPEAN PART NUMBER
Configuration	SINGLE
Maximum drain current (ID)	0.03 A
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	1 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	10 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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ON Semiconductort

JFET VHF/UHF Amplifiers

N–Channel — Depletion

GATE

1 DRAIN

2N5486

2 SOURCE

MAXIMUM RATINGS

Rating

Drain–Gate Voltage

Reverse Gate–Source Voltage

Drain Current

Forward Gate Current

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

Symbol

GSR

G(f)

, T

stg

Value

350

2.8

–65 to +150

Unit

Vdc

mAdc

mW/°C

°C

CASE 29–11, STYLE 5

TO–92 (TO–226AA)

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

= –1.0

µAdc,

= 0)

Gate Reverse Current

= –20 Vdc, V

= 0)

= –20 Vdc, V

= 0, T

= 100°C)

Gate Source Cutoff Voltage

= 15 Vdc, I

= 10 nAdc)

(BR)GSS

GSS

—

GS(off)

–2.0

—

–6.0

—

–1.0

–0.2

nAdc

µAdc

Vdc

–25

—

Vdc

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

= 15 Vdc, V

= 0)

DSS

8.0

—

mAdc

SMALL–SIGNAL CHARACTERISTICS

Forward Transfer Admittance

= 15 Vdc, V

= 0, f = 1.0 kHz)

Input Admittance

= 15 Vdc, V

= 0, f = 400 MHz)

Output Admittance

= 15 Vdc, V

= 0, f = 1.0 kHz)

Output Conductance

= 15 Vdc, V

= 0, f = 400 MHz)

Forward Transconductance

= 15 Vdc, V

= 0, f = 400 MHz)

y



4000

Re(y

)

—

y



—

Re(y

)

—

Re(y

)

3500

—

100

mmhos

—

mmhos

—

1000

mmhos

—

8000

mmhos

Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 0

Publication Order Number:

2N5486/D

2N5486RL Related Products

	2N5486RL	2N5486RLRM	2N5486RLRE	2N5486ZL1	2N5486RL1	2N5486RLRA
Description	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3	3	3
Manufacturer packaging code	CASE 29-11	CASE 29-11	CASE 29-11	CASE 29-11	CASE 29-11	CASE 29-11
Reach Compliance Code	unknown	unknow	unknow	unknown	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum drain current (ID)	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	10 dB	10 dB	10 dB	10 dB	10 dB	10 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	-	1	1

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