Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT PACKAGE-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NEC Electronics |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 12 V |
| Maximum drain current (ID) | 2.5 A |
| Maximum drain-source on-resistance | 0.19 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-F3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 5 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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