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PESD1CAN
CAN bus ESD protection diode
Rev. 04 — 15 February 2008
Product data sheet
1. Product profile
1.1 General description
PESD1CAN in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package designed to protect two automotive Controller Area Network (CAN) bus lines
from the damage caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features
I
Due to the integrated diode structure only one small SOT23 package is needed to
protect two CAN bus lines
I
Max. peak pulse power: P
PP
= 200 W at t
p
= 8/20
µs
I
Low clamping voltage: V
CL
= 40 V at I
PP
= 1 A
I
Ultra low leakage current: I
RM
< 1 nA
I
Typ. diode capacitance matching:
∆C
d
/C
d
= 0.1 %
I
ESD protection up to 23 kV
I
IEC 61000-4-2, level 4 (ESD)
I
IEC 61000-4-5 (surge); I
PP
= 3 A at t
p
= 8/20
µs
I
Small SMD plastic package
1.3 Applications
I
CAN bus protection
I
Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
C
d
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
-
-
-
11
24
17
V
pF
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode 1
cathode 2
common cathode
1
2
2
006aaa155
Simplified outline
3
Symbol
1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD1CAN
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
*AN
Type number
PESD1CAN
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Min
-
-
-
−65
−65
Max
200
3
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 3 or 2 to 3.
PESD1CAN_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 15 February 2008
2 of 12
NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
ESD maximum ratings
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1][2]
Table 6.
Symbol
Per diode
V
ESD
Min
-
-
Max
23
10
Unit
kV
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 3 or 2 to 3.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1. 8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
PESD1CAN_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 15 February 2008
3 of 12
NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
RM
V
BR
C
d
∆C
d
/C
d
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
diode capacitance
matching
V
RWM
= 24 V
I
R
= 5 mA
f = 1 MHz; V
R
= 0 V
[1]
Parameter
Conditions
Min
-
-
25.4
-
-
-
[2][3]
Typ
-
<1
27.8
11
0.1
0.1
-
-
-
Max
24
50
30.3
17
-
-
40
70
300
Unit
V
nA
V
pF
%
%
V
V
Ω
f = 1 MHz; V
R
= 0 V
f = 1 MHz; V
R
= 2.5 V
V
CL
clamping voltage
I
PP
= 1 A
I
PP
= 3 A
-
-
-
r
dif
[1]
[2]
[3]
differential resistance
I
R
= 1 mA
∆C
d
is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured
between pin 2 and pin 3.
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 3 or 2 to 3.
PESD1CAN_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 15 February 2008
4 of 12
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