2N7002BK - 60 V, 350 mA N-channel Trench MOSFET TO-236 3-Pin
| Parameter Name | Attribute value |
| Brand Name | NXP Semiconductor |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | TO-236 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Manufacturer packaging code | SOT23 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 0.35 A |
| Maximum drain-source on-resistance | 1.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-236AB |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Guideline | AEC-Q101 |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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