Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | NEC Electronics |
Parts packaging code | TO-92 |
package instruction | CYLINDRICAL, O-PBCY-T3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum collector current (IC) | 2 A |
Collector-emitter maximum voltage | 16 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 135 |
JEDEC-95 code | TO-92 |
JESD-30 code | O-PBCY-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 200 MHz |
Base Number Matches | 1 |
2SD1513L | 2SD1513U | 2SD1513K | |
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Description | Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN | Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN | Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN |
Is it Rohs certified? | incompatible | incompatible | incompatible |
Maker | NEC Electronics | NEC Electronics | NEC Electronics |
Parts packaging code | TO-92 | TO-92 | TO-92 |
package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Contacts | 3 | 3 | 3 |
Reach Compliance Code | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 2 A | 2 A | 2 A |
Collector-emitter maximum voltage | 16 V | 16 V | 16 V |
Configuration | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 135 | 300 | 200 |
JEDEC-95 code | TO-92 | TO-92 | TO-92 |
JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
JESD-609 code | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | NPN | NPN | NPN |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 200 MHz | 200 MHz | 200 MHz |
Base Number Matches | 1 | 1 | 1 |