KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL Recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
~
~
~
~
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style KBPM
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
1.5 A
50 V to 1000 V
60 A
5 µA
1.0 V
150 °C
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full
wave rectification for Switching Power Supply,
Home
Appliances,
Office
Equipment,
and
Telecommunication applications.
MECHANICAL DATA
Case:
KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals:
Silver plated leads, solderable per
J-STD-002B and JESD22-B102D
E4 suffix for commercial grade
Polarity:
As marked on body
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
Max. average forward output rectified current
at T
A
= 40 °C
* Peak forward surge
current single half sine-wave
Rating for fusing (t < 8.3 ms)
* Operating junction and storage temperature range
* JEDEC registered values
T
A
= 25 °C
T
j
= 150 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
KBP
005M
3N246
50
35
50
KBP
01M
3N247
100
70
100
KBP
02M
3N248
200
140
200
KBP
04M
3N249
400
280
400
1.5
60
40
10
- 55 to + 150
KBP
06M
3N250
600
420
600
KBP
08M
3N251
800
560
800
KBP
10M
3N252
1000
700
1000
V
V
V
A
A
A
2
sec
°C
UNIT
Document Number 88531
11-Oct-06
www.vishay.com
1
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
KBP
005M
3N246
* Maximum instantaneous
at 1.0 A
forward voltage drop per diode at 1.57 A
* Maximum DC reverse
current at rated DC blocking
voltage per diode
Typical junction
capacitance per diode
* JEDEC registered values
T
A
= 25 °C
T
A
= 125 °C
at 4.0 V, 1 MHz
V
F
KBP
01M
3N247
KBP
02M
3N248
KBP
04M
3N249
1.0
1.3
5.0
500
15
KBP
06M
3N250
KBP
08M
3N251
KBP
10M
3N252
V
UNIT
I
R
µA
C
J
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
KBP
005M
3N246
Typical thermal resistance
(1)
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
R
θJA
R
θJL
KBP
01M
3N247
KBP
02M
3N248
KBP
04M
3N249
40
13
KBP
06M
3N250
KBP
08M
3N251
KBP
10M
3N252
°C/W
UNIT
ORDERING INFORMATION
PREFERRED P/N
KBP06M-E4/45
KBP06M-E4/51
3N250-E4/45
3N250-E4/51
UNIT WEIGHT (g)
1.895
1.895
1.895
1.895
PREFERRED PACKAGE CODE
45
51
45
51
BASE QUANTITY
30
600
30
600
DELIVERY MODE
Tube
Anti-static PVC Tray
Tube
Anti-static PVC Tray
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.6
60
60 Hz Resistive or
Inductive Load
P.C.B. Mounted on
0.47 x 0.47" (12 x 12 mm)
Copper Pads
Single Half Sine-Wave
50
T
A
= 25 °C
Bridge Output Full
Wave
Rectified
Current Average (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
Capacitive Load
Ipk/I
AV
= 5.0
Ipk/I
AV
= 10
Ipk/I
AV
= 20
(per leg)
Peak Forward Surge Current (A)
40
30
T
j
= 150 °C
20
10
1.0 Cycle
0
100
120
140 150
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Document Number 88531
11-Oct-06
www.vishay.com
2
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
20
100
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
1
T
j
= 25 °C
Pulse
Widt
h = 300
µ
s
1 % Duty Cycle
Junction Capacitance (pF)
1.6
10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
Instantaneous Reverse Current (µA)
T
j
= 125 °C
1
T
j
= 100 °C
0.1
T
j
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style KBPM
0.125 x 45o
(3.2)
0.600 (15.24)
0.560 (14.22)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
60
(15.2)
MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) Min.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead
by beveled
corner
Document Number 88531
11-Oct-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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