FDP39N20 / FDPF39N20 200V N-Channel MOSFET
March 2007
FDP39N20 / FDPF39N20
200V N-Channel MOSFET
Features
• 39A, 200V, R
DS(on)
= 0.066Ω @V
GS
= 10 V
• Low gate charge ( typical 38 nC)
• Low C
rss
( typical 57 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDP39N20
200
39
23.4
156
±30
860
39
FDPF39N20
39 *
23.4
*
156
*
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
25.1
4.5
251
2.0
-55 to +150
300
59
0.48
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP39N20
0.5
0.5
62.5
FDPF39N20
2.1
-
62.5
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP39N20 / FDPF39N20 Rev. A
FDP39N20 / FDPF39N20 200V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP39N20
FDPF39N20
Device
FDP39N20
FDPF39N20
Package
TO-220
TO-220F
T
C
= 25°C unless otherwise noted
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Conditions
V
GS
= 0V, I
D
= 250µA
I
D
= 250µA, Referenced to 25°C
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, T
C
= 125°C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 19.5A
V
DS
= 40V, I
D
= 19.5A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
(Note 4)
Min.
200
--
--
--
--
--
3.0
--
--
--
--
--
Typ.
--
0.2
--
--
--
--
--
0.056
28.5
1640
400
57
30
160
150
150
38
11
16.5
Max Units
--
--
1
10
100
-100
5.0
0.066
--
2130
520
85
70
330
310
310
49
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
On Characteristics
Dynamic Characteristics
Switching Characteristics
V
DD
= 100V, I
D
= 39A
R
G
= 25Ω
(Note 4, 5)
--
--
--
--
--
--
(Note 4, 5)
V
DS
= 160V, I
D
= 39A
V
GS
= 10V
--
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 39A
V
GS
= 0V, I
S
= 39A
dI
F
/dt =100A/µs
(Note 4)
--
--
--
--
--
--
--
--
152
1.1
39
156
1.4
--
--
A
A
V
ns
µC
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.85mH, I
AS
= 39A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
39A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP39N20 / FDPF39N20 Rev. A
2
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FDP39N20 / FDPF39N20 200V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
Figure 2. Transfer Characteristics
10
2
10
2
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
10
1
150 C
25 C
-55 C
※
Notes :
1. V
DS
= 40V
2. 250µ s Pulse Test
o
o
o
10
0
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
10
-1
10
0
10
1
10
0
2
4
6
8
10
12
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.14
10
2
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
0.10
0.08
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
0.12
10
1
150
℃
25
℃
0.06
V
GS
= 20V
※
Note : T
J
= 25
0.04
0
25
50
75
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
100
125
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
12
4000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 40V
V
DS
= 100V
V
DS
= 160V
C
oss
Capacitances [pF]
8
C
iss
2000
6
4
C
rss
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
2
※
Note : I
D
= 39A
0
-1
10
10
0
10
1
0
0
10
20
30
40
50
60
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FDP39N20 / FDPF39N20 Rev. A
3
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FDP39N20 / FDPF39N20 200V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 19.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µ A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area
- FDP39N20
Figure 9-2. Maximum Safe Operating Area
- FDPF39N20
10
2
10
µ
s
100
µ
s
1 ms
10 ms
100 ms
DC
10
2
10
µ
s
100
µ
s
1 ms
10 ms
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
10
1
Operation in This Area
is Limited by R
DS(on)
100 ms
DC
10
0
10
0
※
Notes :
※
Notes :
10
-1
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-1
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-2
10
0
-2
10
10
1
10
2
10
0
10
1
10
2
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Currentvs. Case Temperature
40
30
I
D
, Drain Current [A]
20
10
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
FDP39N20 / FDPF39N20 Rev. A
4
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FDP39N20 / FDPF39N20 200V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve - FDP39N20
Z
θ
JC
Thermal Response
(t),
D = 0 .5
10
-1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
※
N o te s :
1 . Z
θ
J C
t) = 0 .5
℃
/W M a x .
(
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
t)
(
P
DM
t
1
s in g le p u ls e
10
-2
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
Figure 11-2. Transient Thermal Response Curve - FDPF39N20
10
0
D = 0 .5
0 .2
0 .1
※
N o te s :
1 . Z
θ
J C
t) = 2 .1
℃
/W M a x .
(
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
t)
(
Z
θ
JC
Thermal Response
(t),
10
-1
0 .0 5
0 .0 2
0 .0 1
P
DM
t
1
t
2
10
-2
s in g le p u ls e
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
FDP39N20 / FDPF39N20 Rev. A
5
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