NJL4281D (NPN)
NJL4302D (PNP)
Complementary
ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.
Features
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•
•
•
•
•
Thermally Matched Bias Diode
Instant Thermal Bias Tracking
Absolute Thermal Integrity
High Safe Operating Area
Pb−Free Packages are Available*
BIPOLAR POWER
TRANSISTORS
15 AMP, 350 VOLT, 230 WATT
TO−264, 5 LEAD
CASE 340AA
STYLE 1
Benefits
•
Eliminates Thermal Equilibrium Lag Time and Bias Trimming
•
Superior Sound Quality Through Improved Dynamic Temperature
Response
•
Significantly Improved Bias Stability
•
Simplified Assembly
♦
Reduced Labor Costs
♦
Reduced Component Count
•
High Reliability
Applications
MARKING DIAGRAM
SCHEMATIC
NJLxxxxDG
AYYWW
Thermal Trak
•
High−End Consumer Audio Products
Home Amplifiers
♦
Home Receivers
•
Professional Audio Amplifiers
♦
Theater and Stadium Sound Systems
♦
Public Address Systems (PAs)
♦
NJLxxxxD = Device Code
xxxx = 4281 or 4302
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device
NJL4281D
NJL4281DG
NJL4302D
NJL4302DG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Package
TO−264
TO−264
(Pb−Free)
TO−264
TO−264
(Pb−Free)
Shipping
25 Units / Rail
25 Units / Rail
25 Units / Rail
25 Units / Rail
1
June, 2006 − Rev. 2
Publication Order Number:
NJL4281D/D
NJL4281D (NPN) NJL4302D (PNP)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current
− Continuous
− Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
V
R
I
F(AV)
Value
350
350
5
350
15
30
1.5
230
1.84
− 65 to +150
200
1.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
V
A
Base Current − Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
DC Blocking Voltage
Average Rectified Forward Current
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.54
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic
ESD Protection
Flammability Rating
Human Body Model
Machine Model
Value
>8000 V
> 400 V
UL 94 V−0 @ 0.125 in
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2
NJL4281D (NPN) NJL4302D (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(I
C
= 50 mA, I
B
= 0)
Collector Cut−off Current
(V
CE
= 200 V, I
B
= 0)
Collector Cutoff Current
(V
CB
= 350 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1.0 s (non−repetitive)
(V
CE
= 100 Vdc, t = 1.0 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 15 Adc, V
CE
= 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
Emitter−Base Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 A)
Base−Emitter ON Voltage
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1.0 MHz)
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
2. Diode Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%.
f
T
35
C
ob
−
v
F
1.1
0.93
i
R
10
100
t
rr
100
ns
mA
600
V
−
pF
MHz
h
FE
80
80
80
80
40
10
V
CE(sat)
−
V
BE(sat)
−
V
BE(on)
−
1.5
1.4
Vdc
1.0
Vdc
250
250
250
250
−
−
Vdc
−
I
S/b
4.5
1.0
−
−
Adc
V
CE(sus)
I
CEO
I
CBO
−
I
EBO
−
5.0
50
mAdc
350
−
−
100
Vdc
mAdc
mAdc
Symbol
Min
Max
Unit
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3
NJL4281D (NPN) NJL4302D (PNP)
TYPICAL CHARACTERISTICS
1000
1000
hFE, DC CURRENT GAIN
T
J
= 100°C
T
J
= 25°C
hFE, DC CURRENT GAIN
T
J
= 100°C
100
T
J
= 25°C
100
10
0.01
0.1
1
10
100
10
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain, V
CE
= 5 V,
NPN NJL4281D
1000
hFE, DC CURRENT GAIN
1000
Figure 2. DC Current Gain, V
CE
= 5 V,
PNP NJL4302D
T
J
= 100°C
T
J
= 25°C
hFE, DC CURRENT GAIN
T
J
= 100°C
100
T
J
= 25°C
100
10
0.01
0.1
1
10
100
10
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, V
CE
= 20 V,
NPN NJL4281D
1.4
SATURATION VOLTAGE (V)
SATURATION VOLTAGE (V)
1.2
1
0.8
0.6
0.4
0.2
0
0.01
V
ce(sat)
T
J
= 25°C
I
c
/I
b
= 10
10
100
V
be(sat)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
Figure 4. DC Current Gain, V
CE
= 20 V,
PNP NJL4302D
V
be(sat)
V
ce(sat)
T
J
= 25°C
I
c
/I
b
= 10
10
100
0.1
1
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 5. Typical Saturation Voltage,
NPN NJL4281D
Figure 6. Typical Saturation Voltage,
PNP NJL4302D
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4
NJL4281D (NPN) NJL4302D (PNP)
TYPICAL CHARACTERISTICS
1.4
V
BE(on)
, BASE−EMITTER VOLTAGE
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
V
BE(on)
, BASE−EMITTER VOLTAGE
(V)
2.5
2.0
1.5
1.0
0.5
0.1
1
10
100
0.0
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 7. Typical Base−Emitter Voltages,
NPN NJL4281D
Figure 8. Typical Base−Emitter Voltages,
PNP NJL4302D
fT, CURRENT BANDWIDTH PRODUCT (MHz)
70
60
50
40
V
CE
= 10 V
30
20
10
0
T
J
= 25°C
f
test
= 1 MHz
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
V
CE
= 5 V
fT, CURRENT BANDWIDTH PRODUCT (MHz)
70
60
V
CE
= 5 V
50
40
30
20
10
0
0.1
T
J
= 25°C
f
test
= 1 MHz
1
10
V
CE
= 10 V
Figure 9. Typical Current Gain Bandwidth Product,
NPN NJL4281D
Figure 10. Typical Current Gain Bandwidth Product,
PNP NJL4302D
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