IXGX72N60A3H1 datasheet, PDF - EEWORLD Datasheet

IXGX72N60A3H1: DescriptionInsulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size246KB，7 Pages; ManufacturerIXYS; Environmental Compliance

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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
package instruction	PLUS247, 3 PIN
Contacts	3
Reach Compliance Code	compliant
Other features	LOW CONDUCTION LOSS
Shell connection	COLLECTOR
Maximum collector current (IC)	75 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSFM-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	540 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	885 ns
Nominal on time (ton)	63 ns
Base Number Matches	1

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