UNISONIC TECHNOLOGIES CO., LTD
T2096
HIGH VOLTAGE TRANSISTOR
NPN SILICON TRANSISTOR
DESCRIPTION
The T2096 is a NPN Silicon Planar Transistors in TO-251
package. It is intended for high voltage, switching power supply and
industrial applications.
FEATURES
* Pb-free package is available
* Collector-Emitter voltage: V
CEO
= 400V
* Pulse collector current to 4A
*Pb-free plating product number: T2096L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
T2096-TM3-T
T2096L-TM3-T
Package
TO-251
Pin Assignment
1
2
3
B
C
E
Packing
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R213-017,A
T2096
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
PARAMETER
NPN SILICON TRANSISTOR
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
B
I
C
I
CP
RATINGS
UNIT
Collector-Base Voltage
800
V
Collector-Emitter Voltage
800
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
8
V
Base Current
1
A
DC Collector Current
2
A
Pulse Collector Current (Note 2)
4
A
Ta=25℃
1
Collector Dissipation
P
C
W
Tc=25℃
15
°C
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width
≤300μS,
Duty Cycle≤10%
ELECTRICAL CHARACTERISTICS
(Ta= 25
℃
, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
I
CBO
I
EBO
h
FE 1
h
FE 2
f
T
Cob
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=1mA, I
E
=0
I
C
=5mA, R
BE
=∞
I
E
=1mA, I
C
=0
I
C
=1A, I
B
=0.2A
I
C
=1A, I
B
=0.2A
V
CB
=400V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=0.2A
V
CE
=10V, I
C
=0.2A
V
CB
=10V, f =1MHz
I
C
=1.0A, I
B1
=0.05A
I
B2
= -0.5A, R
L
=200Ω
V
CC
=200V
MIN
800
400
8
TYP
MAX
UNIT
V
V
V
V
V
μA
μA
0.8
1.5
10
10
45
120
20
20
0.5
2.5
0.3
180
MHz
pF
μs
μs
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-017,A
T2096
SWITCHING TIME TEST CIRCUIT
NPN SILICON TRANSISTOR
PW=20μS
D. C 1%
INPUT
50Ω
V
R
I
B1
I
B2
R
B
OUTPUT
R
L
+
100μF
+
470μF
V
CC
=200V
V
BE
= -5V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R213-017,A
T2096
■
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current, I
C
(A)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, I
C
(A)
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QW-R213-017,A
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