5962-9315602HYC datasheet, PDF

5962-9315602HYC: DescriptionSRAM Module, 128KX8, 100ns, CMOS, CDIP32, DUAL CAVITY, BOTTOM BRAZED, HERMETIC SEALED, CERAMIC, DIP-32; Categorystorage storage; File Size123KB，5 Pages; ManufacturerWhite Microelectronics

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5962-9315602HYC Overview

SRAM Module, 128KX8, 100ns, CMOS, CDIP32, DUAL CAVITY, BOTTOM BRAZED, HERMETIC SEALED, CERAMIC, DIP-32

Parameter Name	Attribute value
Maker	White Microelectronics
package instruction	DUAL CAVITY, BOTTOM BRAZED, HERMETIC SEALED, CERAMIC, DIP-32
Reach Compliance Code	unknown
Maximum access time	100 ns
JESD-30 code	R-CDIP-T32
JESD-609 code	e4
length	40.6 mm
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	5.1 mm
Minimum standby current	2 V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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