DRAM 256M SDRAM 16M X 16 200MHz
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Alliance Memory |
Parts packaging code | TSOP2 |
package instruction | TSOP2, TSOP54,.46,32 |
Contacts | 54 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 4.5 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 200 MHz |
I/O type | COMMON |
interleaved burst length | 1,2,4,8 |
JESD-30 code | R-PDSO-G54 |
JESD-609 code | e3/e6 |
length | 22.22 mm |
memory density | 268435456 bit |
Memory IC Type | SYNCHRONOUS DRAM |
memory width | 16 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 54 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 16MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSOP2 |
Encapsulate equivalent code | TSOP54,.46,32 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 1,2,4,8,FP |
Maximum standby current | 0.005 A |
Maximum slew rate | 0.15 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | PURE MATTE TIN/TIN BISMUTH |
Terminal form | GULL WING |
Terminal pitch | 0.8 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 40 |
width | 10.16 mm |