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AS6C8016A-55ZINTR

Description
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
Categorystorage    storage   
File Size901KB,12 Pages
ManufacturerAlliance Memory
Environmental Compliance
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AS6C8016A-55ZINTR Overview

SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM

AS6C8016A-55ZINTR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerAlliance Memory
package instructionTSOP2-44
Reach Compliance Codecompliant
Factory Lead Time8 weeks
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
length18.41 mm
memory density8388608 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of ports1
Number of terminals44
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX16
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.2 mm
Maximum standby current0.000004 A
Minimum standby current1.5 V
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm

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