EMZ1DXV6T5 datasheet, PDF - EEWORLD Datasheet

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EMZ1DXV6T5: DescriptionBipolar Transistors - BJT 100mA 50V Dual; CategoryDiscrete semiconductor The transistor; File Size56KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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EMZ1DXV6T5 Overview

Bipolar Transistors - BJT 100mA 50V Dual

EMZ1DXV6T5 Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
package instruction	LEAD FREE, CASE 463A-01, 6 PIN
Contacts	6
Manufacturer packaging code	463A-01
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	60 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-F6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz

EMZ1DXV6T5 Related Products

	EMZ1DXV6T5	EMZ1DXV6T1G	EMZ1DXV6T5G
Description	Bipolar Transistors - BJT 100mA 50V Dual	Bipolar Transistors - BJT 100mA 50V Dual Complementary	Bipolar Transistors - BJT 100mA 50V Dual Complementary
Brand Name	ON Semiconductor	ON Semiconductor	ON Semiconductor
Is it lead-free?	Lead free	Lead free	Lead free
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor
package instruction	LEAD FREE, CASE 463A-01, 6 PIN	LEAD FREE, CASE 463A-01, 6 PIN	LEAD FREE, CASE 463A-01, 6 PIN
Contacts	6	6	6
Manufacturer packaging code	463A-01	463A-01	463A-01
Reach Compliance Code	unknown	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	60 V	60 V	60 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	120	120	120
JESD-30 code	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	2	2	2
Number of terminals	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260
Polarity/channel type	NPN AND PNP	NPN AND PNP	NPN AND PNP
Maximum power dissipation(Abs)	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED	40
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz	180 MHz
Factory Lead Time	-	1 week	1 week

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