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PHT8N06LT135

Description
MOSFET N-CH TRENCH 55V 7.5A
Categorysemiconductor    Discrete semiconductor   
File Size165KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PHT8N06LT135 Overview

MOSFET N-CH TRENCH 55V 7.5A

PHT8N06LT135 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage55 V
Id - Continuous Drain Current3.5 A
Rds On - Drain-Source Resistance65 mOhms
Vgs - Gate-Source Voltage13 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Dual Drain
Pd - Power Dissipation1.8 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.7 mm
Length6.7 mm
ProductMOSFET Small Signal
Transistor Type1 N-Channel
Width3.7 mm
Fall Time30 ns
Rise Time30 ns
Factory Pack Quantity4000
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time10 ns
Unit Weight0.008818 oz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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