MOSFET 100V P-Channel QFET
| Parameter Name | Attribute value |
| Brand Name | Fairchild Semiconductor |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Fairchild |
| Parts packaging code | TO-220 |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Manufacturer packaging code | 3LD, TO220, JEDEC, MOLDED |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Samacsys Description | Trans MOSFET P-CH 100V 16.5A 3- TO-220 |
| Avalanche Energy Efficiency Rating (Eas) | 580 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 16.5 A |
| Maximum drain current (ID) | 16.5 A |
| Maximum drain-source on-resistance | 0.19 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 100 W |
| Maximum pulsed drain current (IDM) | 66 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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