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DIM200WHS12-E000

Description
Half Bridge IGBT Module
CategoryDiscrete semiconductor    The transistor   
File Size139KB,8 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Environmental Compliance
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DIM200WHS12-E000 Overview

Half Bridge IGBT Module

DIM200WHS12-E000 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDynex
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codeunknow
Other featuresLOW CONDUCTION LOSS
Shell connectionISOLATED
Maximum collector current (IC)200 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)850 ns
Nominal on time (ton)300 ns

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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