EDI8F81025LP70B6C datasheet, PDF

EDI8F81025LP70B6C: DescriptionSRAM Module, 1MX8, 70ns, CMOS, DIP-36; Categorystorage storage; File Size449KB，6 Pages; ManufacturerWhite Electronic Designs Corporation; Websitehttp://www.wedc.com/

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EDI8F81025LP70B6C Overview

SRAM Module, 1MX8, 70ns, CMOS, DIP-36

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	White Electronic Designs Corporation
package instruction	DIP-36
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-XDMA-T36
memory density	8388608 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	36
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP36,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0001 A
Minimum standby current	2 V
Maximum slew rate	0.14 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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