Freescale Semiconductor
Technical Data
Document Number: A2T09VD250N
Rev. 0, 8/2015
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 65 W RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 716 to 960 MHz.
900 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 48 Vdc,
I
DQ(A+B)
= 1000 mA, P
out
= 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
22.5
22.7
22.4
D
(%)
34.8
35.4
35.4
Output PAR
(dB)
7.5
7.4
7.2
ACPR
(dBc)
–34.4
–34.2
–34.3
IRL
(dB)
–18
–19
–12
A2T09VD250NR1
716–960 MHz, 65 W AVG., 48 V
AIRFAST RF POWER LDMOS
TRANSISTOR
800 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 48 Vdc,
I
DQ(A+B)
= 1000 mA, P
out
= 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
790 MHz
806 MHz
821 MHz
G
ps
(dB)
23.0
23.1
22.8
D
(%)
37.3
37.8
37.0
Output PAR
(dB)
7.4
7.2
7.0
ACPR
(dBc)
–33.0
–33.3
–33.8
IRL
(dB)
–15
–19
–13
RF
inA
/V
GSA
1
GND 2
RF
inB
/V
GSB
3
TO-
-270WB-
-6A
PLASTIC
6 RF
outA
/V
DSA
5 GND
4 RF
outB
/V
DSB
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2015. All rights reserved.
A2T09VD250NR1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
–0.5, +105
–6.0, +10
55, +0
–65 to +150
–40 to +150
–40 to +225
Unit
Vdc
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82C, 65 W CW, 48 Vdc, I
DQ(A+B)
= 1000 mA, 940 MHz
Symbol
R
JC
Value
(2,3)
0.56
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 105 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 55 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 96
Adc)
Gate Quiescent Voltage
(5)
(V
DS
= 48 Vdc, I
DQ(A+B)
= 1000 mAdc)
Fixture Gate Quiescent Voltage
(5)
(V
DD
= 48 Vdc, I
DQ(A+B)
= 1000 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 0.96 Adc)
1.
2.
3.
4.
5.
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.3
—
4.0
0.1
1.8
2.5
5.0
0.21
2.3
—
6.0
0.5
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf/calculators.
Refer to
AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.freescale.com/rf
and search for AN1955.
Each side of device measured separately.
Side A and Side B are tied together for this measurement.
A2T09VD250NR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 48 Vdc, I
DQ(A+B)
= 1000 mA, P
out
= 65 W Avg., f = 920 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
VSWR 10:1 at 52 Vdc, 363 W Pulsed CW Output Power
(3 dB Input Overdrive from 308 W Pulsed CW Rated Power)
G
ps
D
PAR
ACPR
IRL
21.0
31.0
6.8
—
—
22.5
34.8
7.5
–34.4
–18
24.0
—
—
–31.5
–10
dB
%
dB
dBc
dB
Load Mismatch
(In Freescale Test Fixture, 50 ohm system) I
DQ(A+B)
= 1000 mA, f = 940 MHz, 12
sec(on),
10% Duty Cycle
No Device Degradation
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 48 Vdc, I
DQ(A+B)
= 1000 mA, 920–960 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point
(2)
AM/PM
(Maximum value measured at the P3dB compression point across
the 920–960 MHz frequency range)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 65 W Avg.
Gain Variation over Temperature
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P1dB
P3dB
—
—
—
240
326
19
—
—
—
W
W
VBW
res
G
F
G
P1dB
—
—
—
—
90
0.3
0.013
0.007
—
—
—
—
MHz
dB
dB/C
dB/C
Table 6. Ordering Information
Device
A2T09VD250NR1
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
Package
TO--270WB--6A
1. Part internally input matched.
2. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T09VD250NR1
RF Device Data
Freescale Semiconductor, Inc.
3
A2T09VD250N
Rev. 0
V
GG
R2
C8
C7
C3
CUT OUT AREA
C1
C2
C4
C10*
C11*
C5
R3
C20
C23*
C13
D69443
R1
C16
C18
V
DD
C15
C12
C22*
C14
C21
C9
R6
R5
C6
R4
C17
C19
*C10, C11, C22 and C23 are mounted vertically.
Figure 2. A2T09VD250NR1 Test Circuit Component Layout
Table 7. A2T09VD250NR1 Test Circuit Component Designations and Values
Part
C1
C2
C3, C4
C5, C6, C7, C15, C16, C17
C8, C9
C10, C11
C12
C13
C14
C18, C19
C20, C21
C22, C23
R1, R2, R5, R6
R3, R4
PCB
Description
3.3 pF Chip Capacitor
2.7 pF Chip Capacitor
4.3 pF Chip Capacitors
47 pF Chip Capacitors
1
F
Chip Capacitors
12 pF Chip Capacitors
5.1 pF Chip Capacitor
4.7 pF Chip Capacitor
5.6 pF Chip Capacitor
10
F
Chip Capacitors
220
F,
100 V Electrolytic Capacitors
1.7 pF Chip Capacitor
1 k, 1/4 W Chip Resistors
10
,
1/4 W Chip Resistors
Rogers RO4350B, 0.020,
r
= 3.66
Part Number
ATC800B3R3BT500XT
ATC800B2R7BT500XT
ATC800B4R3BT500XT
ATC800B470JT500XT
C3216X7R2A105M160AA
ATC800B120JT500XT
ATC800B5R1BT500XT
ATC800B4R7BT500XT
ATC800B5R6BT500XT
C5750X7S2A106M230KB
EEVFK2A221M
ATC800B1R7BT500XT
WCR1206-1KF
WCR1206-10RF
D69443
Manufacturer
ATC
ATC
ATC
ATC
TDK
ATC
ATC
ATC
ATC
TDK
Panasonic
ATC
Welwyn
Welwyn
MTL
A2T09VD250NR1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
V
DD
= 48 Vdc, P
out
= 65 W (Avg.), I
DQ(A+B)
= 1000 mA
27
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
26
Input Signal PAR = 9.9 dB @ 0.01%
D
Probability on CCDF
25
24
23
22
21
20
19
18
820
840
860
IRL
880
900
920
f, FREQUENCY (MHz)
940
960
PARC
G
ps
ACPR
D
, DRAIN
EFFICIENCY (%)
28
45
40
35
30
25
–33
ACPR (dBc)
–34
–35
–36
–37
–38
980
G
ps
, POWER GAIN (dB)
5
0
–5
–10
–15
–20
IRL, INPUT RETURN LOSS (dB)
–2
–2.2
–2.4
–2.6
–2.8
–3
PARC (dB)
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 65 Watts Avg.
–10
V
DD
= 48 Vdc, P
out
= 130 W (PEP)
I
DQ(A+B)
= 1000 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM3--U
IM3--L
–40
IM5--L
–50
–60
IM7--U
IM7--L
1
10
TWO--TONE SPACING (MHz)
100
200
IM5--U
IMD, INTERMODULATION DISTORTION (dBc)
–20
–30
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
23.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
23
G
ps
, POWER GAIN (dB)
22.5
22
21.5
21
20.5
1
0
–1
–2
–3
–4
–5
20
–1 dB = 38.3 W
–2 dB = 54.5 W
–3 dB = 72.7 W
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
40
60
80
P
out
, OUTPUT POWER (WATTS)
100
70
60
ACPR
D
G
ps
50
40
30
20
–25
–30
–35
–40
–45
–50
–55
ACPR (dBc)
V
DD
= 48 Vdc, I
DQ(A+B)
= 1000 mA
f = 940 MHz, Single--Carrier W--CDMA
PARC
10
120
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
D
DRAIN EFFICIENCY (%)
A2T09VD250NR1
RF Device Data
Freescale Semiconductor, Inc.
5
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