DMN2011UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
ADVANCED INFORMATION
V
(BR)DSS
20V
R
DS(ON) max
9.5mΩ @ V
GS
= 4.5V
11mΩ @ V
GS
= 2.5V
I
D max
T
A
= +25°C
11.7A
10.8A
Features
•
•
•
•
•
•
•
•
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm
2
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
•
•
•
•
•
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.0065 grams (Approximate)
Applications
•
•
General Purpose Interfacing Switch
Power Management Functions
D
U-DFN2020-6
Pin1
G
ESD PROTECTED
Bottom View
Bottom View
Pin Out
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2011UFDE-7
DMN2011UFDE-13
Notes:
Marking
N3
N3
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N3
N3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
DMN2011UFDE
D
atasheet number: DS36376 Rev. 4 - 2
1 of 7
www.diodes.com
September 2014
© Diodes Incorporated
DMN2011UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
Steady
State
Continuous Drain Current (Note 6) V
GS
= 4.5V
t<10s
Steady
State
Continuous Drain Current (Note 6) V
GS
= 2.5V
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
I
D
I
D
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
20
±12
11.7
9.3
14.2
11.4
10.8
8.7
13.2
10.6
80
2.5
18
17
Units
V
V
A
A
A
A
A
A
A
mJ
ADVANCE INFORMATION
ADVANCED INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.61
0.39
209
142
1.97
1.27
64
43
9.8
-55 to +150
°C
Units
W
°C/W
W
°C/W
DMN2011UFDE
D
atasheet number: DS36376 Rev. 4 - 2
2 of 7
www.diodes.com
September 2014
© Diodes Incorporated
DMN2011UFDE
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
Min
20
—
—
—
0.4
Typ
—
—
—
—
—
6.5
Static Drain-Source On-Resistance
R
DS(ON)
—
7.5
10
15
Diode Forward Voltage
On State Drain Current (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Max
—
1
100
±10
1.0
9.5
11
20
35
1.2
—
3372
443
398
3
36
84
6
8
6
4
33
21
20
11
Unit
V
µA
µA
µA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 7A
V
GS
= 2.5V, I
D
= 7A
V
GS
= 1.8V, I
D
= 5A
V
GS
= 1.5V, I
D
= 3A
V
GS
= 0V, I
S
= 8.5A
V
DS
≦5V,
V
GS
= 4.5V
ADVANCE INFORMATION
ADVANCED INFORMATION
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Zero Gate Voltage Drain Current T
J
= +150°C (Note 9)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
mΩ
V
SD
I
D(ON)
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
T
rr
Q
rr
—
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.7
—
2248
295
265
1.5
24
56
3.5
5.1
3.6
2.6
21.6
13.5
12.8
6.9
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 10V, I
D
= 8.5A
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8Ω
I
F
= 8.5A, di/dt = 210A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
30.0
V
GS
= 10V
V
GS
= 4.5V
30
V
DS
= 5.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
V
GS
= 3.5V
25
20.0
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.0V
V
GS
= 1.5V
I
D
, DRAIN CURRENT (A)
20
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
15.0
15
10.0
10
T
A
= 25°C
5.0
V
GS
= 1.2V
V
GS
= 1.0V
5
T
A
= -55°C
0.0
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
DMN2011UFDE
D
atasheet number: DS36376 Rev. 4 - 2
3 of 7
www.diodes.com
September 2014
© Diodes Incorporated
DMN2011UFDE
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.03
0.025
I
D
= 8.5A
ADVANCE INFORMATION
ADVANCED INFORMATION
0.02
I
D
= 3.0A
V
GS
= 1.5V
0.015
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
0.01
0.005
0
0
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
8
10
4
6
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
12
0.016
V
GS
= 4.5V
2
0.014
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.012
0.01
0.008
0.006
0.004
0.002
0
0
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
1.6
V
GS
= 2.5 V
I
D
= 5A
1.2
V
GS
= 1.8V
I
D
= 3A
0.8
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
5
30
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
0.02
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1
0.018
0.016
0.014
0.012
0.01
V
GS
= 2.5V
I
D
= 5A
V
GS
= 1.8V
I
D
= 3A
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
0.8
I
D
= 1mA
0.6
I
D
= 250µA
0.008
0.006
0.004
0.002
0
-50
0.4
0.2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
-50
DMN2011UFDE
D
atasheet number: DS36376 Rev. 4 - 2
4 of 7
www.diodes.com
September 2014
© Diodes Incorporated
DMN2011UFDE
30
10000
f = 1MHz
25
ADVANCE INFORMATION
ADVANCED INFORMATION
C
T
, JUNCTION CAPACITANCE (pF)
I
S
, SOURCE CURRENT (A)
20
C
iss
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
15
1000
10
C
oss
5
C
rss
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
100
0
2
4
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
10
1000
R
DS(on)
Limited
V
GS
GATE THRESHOLD VOLTAGE (V)
9
8
7
6
5
4
3
2
1
0
0
20
30
40
50
10
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
60
V
DS
= 10V
I
D
= 8.5A
100
-I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0.1
T
A
= 25°C
T
J(max)
= 150°C
0.01
0.01
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 207°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
0.001
DMN2011UFDE
D
atasheet number: DS36376 Rev. 4 - 2
5 of 7
www.diodes.com
September 2014
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
