BR25L160-W datasheet, PDF - EEWORLD Datasheet

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BR25L160-W: DescriptionEEPROM; Categorystorage storage; File Size1MB，39 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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BR25L160-W Overview

EEPROM

BR25L160-W Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	DIP
package instruction	DIP, DIP8,.3
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum clock frequency (fCLK)	5 MHz
Data retention time - minimum	40
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-PDIP-T8
JESD-609 code	e3/e2
length	9.3 mm
memory density	16384 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	2048 words
character code	2000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
power supply	2/5 V
Certification status	Not Qualified
Maximum seat height	3.7 mm
Serial bus type	SPI
Maximum standby current	0.000002 A
Maximum slew rate	0.003 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	1.8 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN/TIN COPPER
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	10
width	7.62 mm
Maximum write cycle time (tWC)	5 ms
write protect	HARDWARE/SOFTWARE
Base Number Matches	1

BR25L160-W Related Products

	BR25L160-W	BR25L320-W
Description	EEPROM	EEPROM
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor
Parts packaging code	DIP	DIP
package instruction	DIP, DIP8,.3	DIP, DIP8,.3
Contacts	8	8
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum clock frequency (fCLK)	5 MHz	5 MHz
Data retention time - minimum	40	40
Durability	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
JESD-30 code	R-PDIP-T8	R-PDIP-T8
JESD-609 code	e3/e2	e3/e2
length	9.3 mm	9.3 mm
memory density	16384 bit	32768 bit
Memory IC Type	EEPROM	EEPROM
memory width	8	8
Number of functions	1	1
Number of terminals	8	8
word count	2048 words	4096 words
character code	2000	4000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C
organize	2KX8	4KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP
Encapsulate equivalent code	DIP8,.3	DIP8,.3
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Parallel/Serial	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	260	260
power supply	2/5 V	2/5 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	3.7 mm	3.7 mm
Serial bus type	SPI	SPI
Maximum standby current	0.000002 A	0.000002 A
Maximum slew rate	0.003 mA	0.003 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	1.8 V	1.8 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL
Terminal surface	TIN/TIN COPPER	TIN/TIN COPPER
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
width	7.62 mm	7.62 mm
Maximum write cycle time (tWC)	5 ms	5 ms
write protect	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE
Base Number Matches	1	1

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