HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
September 2005
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
General Description
The
HGTP7N60C3D,
HGT1S7N60C3DS
and
HGT1S7N60C3D are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
IGBT used is developmental type TA49115. The diode
used in anti-parallel with the IGBT is developmental type
TA49057.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49121.
Features
14A,
600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time...................140ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
JEDEC TO-220AB
COLLECTOR (FLANGE)
GATE
EMITTER
JEDEC TO-263AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
JEDEC TO-262
EMITTER
GATE
COLLECTOR
(FLANGE)
COLLECTOR
G
C
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2005 Fairchild Semiconductor Corporation
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B
1
1
www.fairchildsemi.com
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I(AVG)
I
CM
V
GES
V
GEM
SSOA
P
D
T
J
, T
STG
T
L
t
SC
Parameter
Collector to Emitter Voltage
Collector Current Continuous At T
C
= 25
o
C
Average Diode Forward Current at 110
o
C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150 C (Figure 14)
Power Dissipation Total at T
C
= 25 C
o
o
Ratings
600
14
7
8
56
±20
±30
40A at 480V
60
0.487
-40 to 150
260
1
8
Units
V
A
A
A
A
V
V
W
W/
o
C
o
o
Collector Current Continuous At T
C
=
110
o
C
Power Dissipation Derating T
C
> 25
o
C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Short Circuit Withstand Time (Note 2) at V
GE
= 15V
Short Circuit Withstand Time (Note 2) at V
GE
= 10V
C
C
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only
rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 50W.
Thermal Characteristics
R
θJC
Thermal Resistance IGBT
Thermal Resistance Diode
2.1
2.0
o
C/W
o
C/W
Package Marking and Ordering Information
Part Number
HGTP7N60C3D
HGT1S7N60C3DS
HGT1S7N60C3D
Package
TO-220AB
TO-263AB
TO-262
Brand
G7N60C3D
G7N60C3D
G7N60C3D
NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
2
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B
1
www.fairchildsemi.com
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
CES
I
CES
I
GES
V
CE(SAT)
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Gate-Emitter Leakage Current
Collector to Emitter Saturation Voltage
I
C
= 250µA, V
GE
= 0V
600
-
-
T
C
= 25 C
T
C
= 150 C
o
o
-
-
-
1.6
1.9
-
250
2.0
±250
2.0
2.4
V
µA
mA
nA
V
V
V
CE
= BV
CES
,
T
C
=
V
CE
= BV
CES
,
T
C
= 150
o
C
V
GE
=
±25V
I
C
= I
C110
,
V
GE
= 15V
25
o
C
-
-
On Characteristics
V
GE(TH)
Gate-Emitter Threshold Voltage
I
C
= 250µA, V
CE
= V
GE
,
T
C
= 25
o
C
T
J
= 150
o
C,
R
G
= 50Ω
,
V
GE
= 15V,
L = 1mH
V
CE(PK)
= 480V
V
CE(PK)
= 600V
3.0
40
60
-
5.0
-
-
8
6.0
-
-
-
V
A
A
V
SSOA
V
GEP
Switching SOA
Gate to Emitter Plateau Voltage
I
C
= I
C110
, V
CE
= 0.5 BV
CES
Switching Characteristics
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
Q
G(ON)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
On-State Gate Charge
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 50Ω
L = 1mH
V
GE
= 15V
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 20V
-
-
-
-
-
-
-
-
8.5
11.5
350
140
165
600
23
30
-
-
400
275
-
-
30
38
ns
ns
ns
ns
µJ
µJ
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
V
EC
t
rr
NOTES:
3.Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
Diode Forward Voltage
Diode Reverse Recovery Time
I
EC
= 7A
I
EC
= 7A, dI
EC
/dt = 200A/µs
I
EC
= 1A, dI
EC
/dt = 200A/µs
-
-
-
1.9
25
18
2.5
37
30
V
ns
ns
3
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B
1
www.fairchildsemi.com
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40 DUTY CYCLE <0.5%, V = 10V
CE
PULSE DURATION = 250µs
35
30
25
20
15
10
5
0
4
6
8
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
T
C
=
150
o
C
40
PULSE DURATION = 250µs,
DUTY CYCLE <0.5%,
35 T
C
= 25
o
C
30
25
20
15
10
5
0
0
2
4
V
GE
= 15.0V
12.0V
10.0V
T
C
= 25
o
C
T
C
= -40
o
C
9.0V
8.5V
8.0V
7.5V
7.0V
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. TRANSFER CHARACTERISTICS
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 2. SATURATION CHARACTERISTICS
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
35
30
25
20
15
10
5
0
0
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 10V
40
35
30
25
20
15
10
5
0
0
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
T
C
= 150
o
C
T
C
= 25
o
C
1
2
3
4
5
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. COLLECTOR TO EMITTER ON-STATE
VOLTAGE
15
V
GE
= 15V
Figure 4. COLLECTOR TO EMITTER ON-STATE
VOLTAGE
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
I
CE
, DC COLLECTOR CURRENT (A)
V
CE
= 360V, R
G
= 50Ω, T
J
= 125
o
C
12
10
I
SC
8
120
9
100
6
6
80
3
4
t
SC
2
10
13
14
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
0
25
50
75
100
125
150
40
15
T
C
, CASE TEMPERATURE (
o
C)
Figure 5. MAXIMUM DC COLLECTOR CURRENT
vs CASE TEMPERATURE
Figure 6. SHORT CIRCUIT WITHSTAND TIME
4
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B
1
www.fairchildsemi.com
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
12
140
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Typical Performance Curves
50
t
d(ON)I
, TURN-ON DELAY TIME (ns)
500
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
40
30
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
450
400
350
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
20
V
GE
= 10V
V
GE
= 15V
10
V
GE
= 10V or 15V
300
250
5
2
5
8
11
14
17
20
200
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
8
11
14
17
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
Figure 7. TURN-ON DELAY TIME vs COLLECTOR
TO EMITTER CURRENT
200
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
t
fI
, FALL TIME (ns)
Figure 8. TURN-OFF DELAY TIME vs
COLLECTOR TO EMITTER CURRENT
300
250
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
t
rI
, TURN-ON RISE TIME (ns)
100
200
V
GE
= 10V or 15V
150
V
GE
= 15V
10
5
2
17
14
8
11
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
20
100
2
5
8
11
14
17
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. TURN-ON RISE TIME vs COLLECTOR
TO EMITTER CURRENT
2000
E
ON
, TURN-ON ENERGY LOSS (µJ)
Figure 10. Single Pulse Maximum
Power Dissipation
3000
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
1000
500
V
GE
= 15V
1000
500
V
GE
= 10V OR 15V
100
40
2
5
8
11
14
17
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
100
2
5
8
11
14
17
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
Figure 11. TURN-ON ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
Figure 12. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
5
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B
1
www.fairchildsemi.com
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