TRANSISTOR 30 A, 100 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220ML, 3 PIN, FET General Purpose Power
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Objectid | 1043831531 |
Parts packaging code | TO-220AB |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Samacsys Manufacturer | onsemi |
Samacsys Modified On | 2017-03-07 21:15:38 |
YTEOL | 0 |
Avalanche Energy Efficiency Rating (Eas) | 281 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 30 A |
Maximum drain-source on-resistance | 0.042 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 30 W |
Maximum pulsed drain current (IDM) | 120 A |
surface mount | NO |
Terminal surface | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |