|
PHP110NQ06LT |
PHB110NQ06LT |
Description |
N-channel TrenchMOS logic level FET |
N-channel TrenchMOS logic level FET |
Is it Rohs certified? |
conform to |
conform to |
Maker |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
Reach Compliance Code |
unknown |
_compli |
Configuration |
Single |
Single |
Maximum drain current (Abs) (ID) |
75 A |
75 A |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-609 code |
e3 |
e3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
175 °C |
175 °C |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
200 W |
200 W |
surface mount |
NO |
YES |
Terminal surface |
Matte Tin (Sn) |
Matte Tin (Sn) |