NGTB25N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
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•
•
•
•
•
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are Pb−Free Devices
25 A, 1200 V
V
CEsat
= 1.85 V
E
off
= 0.8 mJ
C
Typical Applications
•
Inductive Heating
•
Consumer Appliances
•
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ T
C
= 25°C
@ T
C
= 100°C
Pulsed collector current, T
pulse
limited by T
Jmax
Diode forward current
@ T
C
= 25°C
@ T
C
= 100°C
Diode pulsed current, T
pulse
limited
by T
Jmax
Gate−emitter voltage
Power Dissipation
@ T
C
= 25°C
@ T
C
= 100°C
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Symbol
V
CES
I
C
Value
1200
50
25
200
Unit
V
A
G
C
E
G
E
TO−247
CASE 340L
STYLE 4
I
CM
I
F
A
A
MARKING DIAGRAM
50
25
200
$20
192
77
−55
to +150
−55
to +150
260
I
FM
V
GE
P
D
A
V
W
25N120IHL
AYWWG
T
J
T
stg
T
SLD
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB25N120IHLWG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2012
August, 2012
−
Rev. 2
1
Publication Order Number:
NGTB25N120IHLW/D
NGTB25N120IHLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
R
qJC
R
qJC
R
qJA
Value
0.65
2.0
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 25 A
V
GE
= 0 V, I
F
= 25 A, T
J
= 150°C
V
F
1.7
1.8
1.8
V
T
J
= 25°C
V
CC
= 600 V, I
C
= 25 A
R
g
= 10
W
V
GE
= 0 V/ 15V
T
J
= 125°C
V
CC
= 600 V, I
C
= 25 A
R
g
= 10
W
V
GE
= 0 V/ 15V
t
d(off)
t
f
E
off
t
d(off)
t
f
E
off
235
160
0.8
250
225
1.9
mJ
mJ
ns
ns
V
CE
= 600 V, I
C
= 25 A, V
GE
= 15 V
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
−
−
−
4700
155
100
200
38
100
−
−
−
nC
pF
V
GE
=
0 V, I
C
= 500
mA
V
GE
= 15 V, I
C
= 25 A
V
GE
= 15 V, I
C
= 25 A, T
J
= 150°C
V
GE
= V
CE
, I
C
= 250
mA
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J =
150°C
V
GE
= 20 V, V
CE
= 0 V
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
I
GES
1200
−
−
4.5
−
−
−
−
1.85
2.1
5.5
−
−
−
−
2.3
−
6.5
0.5
2.0
100
V
V
V
mA
nA
Test Conditions
Symbol
Min
Typ
Max
Unit
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2
NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
120
I
C
, COLLECTOR CURRENT (A)
T
J
= 25°C
100
80
60
40
20
0
9V
V
GE
= 20 to 13 V
I
C
, COLLECTOR CURRENT (A)
11 V
10 V
120
T
J
= 150°C
100
80
60
40
20
0
8V
7V
0
1
2
3
4
5
10 V
9V
V
GE
= 20 to 11 V
8V
7V
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
120
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 13 V
100
80
T
J
=
−40°C
60
40
20
0
8V
0
1
2
3
4
5
9V
7V
11 V
10 V
120
100
80
60
40
20
0
Figure 2. Output Characteristics
T
J
= 150°C
T
J
= 25°C
0
5
10
15
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
10,000
120
C
ies
I
F
, FORWARD CURRENT (A)
100
Figure 4. Typical Transfer Characteristics
C, CAPACITANCE (pF)
T
J
= 25°C
80
60
40
20
0
T
J
= 125°C
1000
100
C
oes
C
res
10
0
25
50
75
100
125
150
175
200
0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
F
, FORWARD VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Diode Forward Characteristics
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NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
E
off
, TURN−OFF SWITCHING LOSS (mJ)
16
V
GE
, GATE−EMITTER VOLTAGE (V)
14
12
10
8
6
4
2
0
0
50
100
150
200
250
200 V
400 V
600 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
CE
= 600 V
V
GE
= 15 V
I
C
= 25 A
Rg = 10
W
0
20
40
60
80
100
120
140
160
Q
G
, GATE CHARGE (nC)
TEMPERATURE (°C)
Figure 7. Typical Gate Charge
E
off
, TURN−OFF SWITCHING LOSS (mJ)
1000
t
d(off)
SWITCHING TIME (ns)
100
t
f
3.0
2.5
2.0
1.5
1.0
0.5
0
Figure 8. Energy Loss vs. Temperature
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10
W
10
1
V
CE
= 600 V
V
GE
= 15 V
I
C
= 25 A
Rg = 10
W
0
20
40
60
80
100
120
140
160
10
14
18
22
26
30
34
38
42
TEMPERATURE (°C)
I
C
, COLLECTOR (A)
Figure 9. Switching Time vs. Temperature
E
off
, TURN−OFF SWITCHING LOSS (mJ)
1000
t
f
SWITCHING TIME (ns)
t
d(off)
100
3.0
2.5
2.0
1.5
1.0
0.5
0
5
15
Figure 10. Energy Loss vs. I
C
10
1
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10
W
10
14
18
22
26
30
34
38
42
V
CE
= 600 V
V
GE
= 15 V
I
C
= 25 A
T
J
= 150°C
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
I
C
, COLLECTOR (A)
Figure 11. Switching Time vs. I
C
Figure 12. Energy Loss vs. Rg
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NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
10,000
2.5
2.0
ENERGY (mJ)
1.5
1.0
0.5
0
V
GE
= 15 V
I
C
= 25 A
Rg = 10
W
T
J
= 150°C
375 425
475
525
575
625
675
725 775
SWITCHING TIME (ns)
t
d(off)
1000
t
f
100
10
V
CE
= 600 V
V
GE
= 15 V
I
C
= 25 A
T
J
= 150°C
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. Rg
1000
t
d(off)
SWITCHING TIME (ns)
100
t
f
1000
I
C
, COLLECTOR CURRENT (A)
100
Figure 14. Energy Loss vs. V
CE
1 ms
50
ms
100
ms
10
1
0.1
0.01
dc operation
10
1
V
GE
= 15 V
I
C
= 25 A
Rg = 10
W
T
J
= 150°C
375 425
475
525
575
625
675
725
775
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. V
CE
1000
I
C
, COLLECTOR CURRENT (A)
Figure 16. Safe Operating Area
100
10
1
V
GE
= 15 V, T
C
= 125°C
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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