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AT25DF011-MAHNHR-T

Description
NOR Flash 8-UDFN (2x3x0.6), HIGH TEMP, 1.65V, T&R
Categorystorage   
File Size2MB,42 Pages
ManufacturerAdesto Technologies
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AT25DF011-MAHNHR-T Overview

NOR Flash 8-UDFN (2x3x0.6), HIGH TEMP, 1.65V, T&R

AT25DF011-MAHNHR-T Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerAdesto Technologies
Product CategoryNOR Flash
RoHSDetails
PackagingReel
Moisture SensitiveYes
NumOfPackaging1
Factory Pack Quantity5000
AT25DF011
1-Mbit, 1.65V Minimum
SPI Serial Flash Memory with Dual-Read Support
Features
Single 1.65V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual Output Read
104MHz Maximum Operating Frequency
Clock-to-Output (t
V
) of 6 ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Small (256-Byte) Page Erase
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
1.5ms Typical Page Program (256 Bytes) Time
50ms Typical 4-Kbyte Block Erase Time
350ms Typical 32-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
200nA Ultra Deep Power Down current (Typical)
5µA Deep Power-Down Current (Typical)
25uA Standby current (Typical)
4.5mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil)
8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
8-lead TSSOP Package
8-ball WLCSP
(1)
Note: 1. Contact factory for availability.
DS-25DF011–032F–5/2017
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