TP0604N3 datasheet, PDF - EEWORLD Datasheet

TP0604N3: DescriptionMOSFET 40V 2Ohm; Categorysemiconductor Discrete semiconductor; File Size575KB，5 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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MOSFET 40V 2Ohm

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Microchip
Product Category	MOSFET
RoHS	In Transition
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	- 40 V
Id - Continuous Drain Current	- 430 mA
Rds On - Drain-Source Resistance	2 Ohms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	1 W
Channel Mode	Enhancement
Height	5.33 mm
Length	5.21 mm
Transistor Type	1 P-Channel
Type	FET
Width	4.19 mm
Fall Time	6 ns
NumOfPackaging	1
Rise Time	7 ns
Factory Pack Quantity	1000
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	5 ns
Unit Weight	0.007760 oz

	TP0604N3	TP0604N3-G-P003	TP0604N3-P013	TP0604WG-G
Description	MOSFET 40V 2Ohm	MOSFET P-CH Enhancmnt Mode MOSFET	MOSFET 40V 2Ohm	MOSFET MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 2.0
Manufacturer	Microchip	Microchip	Microchip	Microchip
Product Category	MOSFET	MOSFET	MOSFET	MOSFET
Technology	Si	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole	SMD/SMT
Package / Case	TO-92-3	TO-92-3	TO-92-3	TO-92-3
Number of Channels	1 Channel	1 Channel	1 Channel	4 Channel
Transistor Polarity	P-Channel	P-Channel	P-Channel	P-Channel
Vds - Drain-Source Breakdown Voltage	- 40 V	- 40 V	- 40 V	- 40 V
Id - Continuous Drain Current	- 430 mA	- 430 mA	- 430 mA	- 600 mA
Rds On - Drain-Source Resistance	2 Ohms	3.5 Ohms	2 Ohms	1.5 Ohms
Vgs - Gate-Source Voltage	20 V	20 V	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C
Configuration	Single	Single	Single	Quad Triple Drain
Pd - Power Dissipation	1 W	1 W	1 W	1 W
Channel Mode	Enhancement	Enhancement	Enhancement	Enhancement
Height	5.33 mm	5.33 mm	5.33 mm	2.55 mm
Length	5.21 mm	5.21 mm	5.21 mm	12.8 mm
Transistor Type	1 P-Channel	1 P-Channel	1 P-Channel	4 P-Channel
Width	4.19 mm	4.19 mm	4.19 mm	7.5 mm
Fall Time	6 ns	6 ns	6 ns	6 ns
Rise Time	7 ns	7 ns	7 ns	7 ns
Typical Turn-Off Delay Time	10 ns	10 ns	10 ns	10 ns
Typical Turn-On Delay Time	5 ns	5 ns	5 ns	5 ns
RoHS	In Transition	Details	No	-
Factory Pack Quantity	1000	2000	2000	-
Unit Weight	0.007760 oz	0.016000 oz	0.007760 oz	-

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