TP0604N3-G-P003 datasheet, PDF

TP0604N3-G-P003: DescriptionMOSFET P-CH Enhancmnt Mode MOSFET; Categorysemiconductor Discrete semiconductor; File Size575KB，5 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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MOSFET P-CH Enhancmnt Mode MOSFET

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	Microchip
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	- 40 V
Id - Continuous Drain Current	- 430 mA
Rds On - Drain-Source Resistance	3.5 Ohms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement
Packaging	Reel
Fall Time	6 ns
Height	5.33 mm
Length	5.21 mm
Pd - Power Dissipation	1 W
Product	MOSFET Small Signal
Rise Time	7 ns
Factory Pack Quantity	2000
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	5 ns
Width	4.19 mm
Unit Weight	0.016000 oz

	TP0604N3-G-P003	TP0604N3-P013	TP0604WG-G	TP0604N3
Description	MOSFET P-CH Enhancmnt Mode MOSFET	MOSFET 40V 2Ohm	MOSFET MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 2.0	MOSFET 40V 2Ohm
Product Category	MOSFET	MOSFET	MOSFET	MOSFET
Manufacturer	Microchip	Microchip	Microchip	Microchip
Technology	Si	Si	Si	Si
Mounting Style	Through Hole	Through Hole	SMD/SMT	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3	TO-92-3
Number of Channels	1 Channel	1 Channel	4 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel	P-Channel	P-Channel
Vds - Drain-Source Breakdown Voltage	- 40 V	- 40 V	- 40 V	- 40 V
Id - Continuous Drain Current	- 430 mA	- 430 mA	- 600 mA	- 430 mA
Rds On - Drain-Source Resistance	3.5 Ohms	2 Ohms	1.5 Ohms	2 Ohms
Vgs - Gate-Source Voltage	20 V	20 V	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C
Configuration	Single	Single	Quad Triple Drain	Single
Channel Mode	Enhancement	Enhancement	Enhancement	Enhancement
Fall Time	6 ns	6 ns	6 ns	6 ns
Height	5.33 mm	5.33 mm	2.55 mm	5.33 mm
Length	5.21 mm	5.21 mm	12.8 mm	5.21 mm
Pd - Power Dissipation	1 W	1 W	1 W	1 W
Rise Time	7 ns	7 ns	7 ns	7 ns
Transistor Type	1 P-Channel	1 P-Channel	4 P-Channel	1 P-Channel
Typical Turn-Off Delay Time	10 ns	10 ns	10 ns	10 ns
Typical Turn-On Delay Time	5 ns	5 ns	5 ns	5 ns
Width	4.19 mm	4.19 mm	7.5 mm	4.19 mm
RoHS	Details	No	-	In Transition
Factory Pack Quantity	2000	2000	-	1000
Unit Weight	0.016000 oz	0.007760 oz	-	0.007760 oz

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