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IRFPE50PBF

Description
MOSFET N-Chan 800V 7.8 Amp
CategoryDiscrete semiconductor    The transistor   
File Size2MB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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MOSFET N-Chan 800V 7.8 Amp

IRFPE50PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-247AC
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Factory Lead Time6 weeks
Samacsys DescriptionN-channel MOSFET,IRFPE50 7.8A 600V
Avalanche Energy Efficiency Rating (Eas)770 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)7.8 A
Maximum drain current (ID)7.8 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)190 W
Maximum pulsed drain current (IDM)31 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFPE50, SiHFPE50
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
200
24
110
Single
D
FEATURES
800
1.2
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-247AC
DESCRIPTION
G
S
D
G
S
N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The
TO-247AC
package
is
preferred
for
commercial-industrial applications where higher power levels
preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because of
its isolated mounting hole. It also provides greater creepage
distance between pins to meet the requirements of most
safety specifications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFPE50PbF
SiHFPE50-E3
IRFPE50
SiHFPE50
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
800
± 20
7.8
4.9
31
1.5
770
7.8
19
190
2.0
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 23 mH, R
g
= 25
Ω,
I
AS
= 7.8 A (see fig. 12).
c. I
SD
7.8 A, dI/dt
140 A/μs, V
DD
600 V, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91248
S11-0442-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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