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IXFN120N20

Description
MOSFET 200V 120A
Categorysemiconductor    Discrete semiconductor   
File Size155KB,4 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXFN120N20 Overview

MOSFET 200V 120A

IXFN120N20 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerIXYS ( Littelfuse )
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleChassis Mount
Package / CaseSOT-227-4
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance17 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Dual Source
Pd - Power Dissipation600 W
Channel ModeEnhancement
PackagingTube
Height9.6 mm
Length38.23 mm
Transistor Type1 N-Channel
Width25.42 mm
Forward Transconductance - Min77 S
Fall Time40 ns
NumOfPackaging1
Rise Time55 ns
Factory Pack Quantity10
Typical Turn-Off Delay Time110 ns
Typical Turn-On Delay Time42 ns
Unit Weight1.058219 oz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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