HiPerFAST
TM
IGBT
ISOPLUS247
TM
V
CES
IXGR 40N60C
IXGR 40N60CD1 I
C25
V
CE(sat)
(Electrically Isolated Backside)
t
fi(typ)
Preliminary Data Sheet
(D1)
= 600 V
= 75 A
= 2.7
V
= 75
ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
35
150
I
CM
= 80
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
ISOPLUS 247
E153432
G
C
E
Isolated Backside*
G = Gate,
E = Emitter
C = Collector
* Patent pending
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
DS98803B(03/04)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Symbol
Test Conditions
Mounting torque (M3)
1.13/10Nm/lb.in.
5
g
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
40N60C
40N60CD1
40N60C
40N60CD1
40N60C
40N60CD1
40N60C
40N60CD1
600
600
2.5
2.5
5.0
5.0
200
650
1
3
±100
2.5
2.7
V
V
V
µA
µA
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
C
I
C
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 750
µA
= 250
µA,
V
CE
= V
GE
= 500
µA
V
CE
=
0.8 • V
CES
T
J
= 25°C
V
GE
= 0 V; note 1
T
J
= 25°C
T
J
= 125°C
T
J
= 125°C
I
GES
V
CE(sat)
V
CE
= 0 V, V
GE
=
±20
V
I
C
=
I
T
,
V
GE
= 15 V
© 2004 IXYS All rights reserved
IXGR 40N60C
IXGR 40N60CD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
30
40
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
150
150
1.70
ns
ns
mJ
ns
ns
mJ
mJ
ns
ns
mJ
0.6 K/W
0.15
K/W
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
ISOPLUS 247 OUTLINE
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
T
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
V
CE
= 25 V, V
GE
3300
40N60C
310
= 0 V, f = 1 MHz
40N60CD1
370
65
116
I
C
= I
T
, V
GE
= 15 V, V
CE
= 0.5 V
CES
23
55
Inductive load, T
J
= 25°C
°
I
C
= I
T
, V
GE
= 15 V
V
CE
= 0.8 • V
CES
, R
G
= R
off
= 4.7
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
°
Inductive load, T
J
= 125°C
I
C
= I
T
, V
GE
= 15 V
40N60C
25
30
100
75
0.85
25
35
0.4
V
CE
= 0.8 • V
CES
, R
G
= R
off
= 4.7
Ω
40N60CD1 1.2
Remarks: Switching times may increase for
150
V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
105
increased R
G
1.2
Reverse Diode (FRED) (IXGR40N60CD1 only)
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol
Test Conditions
min. typ. max.
V
F
I
RM
t
rr
R
thJC
I
F
=
I
T
, V
GE
= 0 V,
Note 1
I
F
=
I
T
, V
GE
= 0 V, V
R
= 100 V
-di
F
/dt = 100 A/µs
T
J
= 150°C
T
J
= 25°C
T
J
= 100°C
3.5
1.3
1.8
7.5
V
V
A
ns
0.90 K/W
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V
Note:
1. Pulse test,
t
p
≤
300 ms, duty cycle:d
≤
2 %
2. I
T
= 40A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
Microcontroller MCU
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