ITR8102
Features
․Fast
response time
․High
analytic
․High
sensitivity
․Pb
free
․This
product itself will remain within RoHS compliant version
Description
The
ITR8102
consist of an infrared emitting diode and an NPN
silicon phototransistor, encased side-by-side on converging optical
axis in a black
thermoplastic housing The phototransistor receives radiation from
the IR only .This is the normal situation. But when an object is in
between, phototransistor could not receive the radiation.
Applications
․Mouse
Copier
․Switch
Scanner
․Floppy
disk driver
․Non-contact
Switching
․For
Direct Board
1
Revision
Copyright ©
: (4)
LifecyclePhase:
Release Date:
2010, Everlight All Rights Reserved. Release Date : Feb.25.2013. Issue No: DRX-0000139 Rev4
www.everlight.com
Expired Period: Forever
DATASHEET
ITR8102
Device Selection Guide
Device No.
IR
PT
Chip Material
GaAlAs
Silicon
LENS COLOR
Water Clear
Water Clear
Absolute Maximum Ratings (Ta=25℃)
Parameter
Power Dissipation at(or below) 25℃ Free
Air Temperature
Reverse Voltage
Forward Current
Peak Forward Current (*1)
Pulse width
≦100μs,
Duty cycle=1%
Collector Power Dissipation
Collector Current
Collector-Emitter Voltage
Symbol
Pd
V
R
I
F
I
FP
P
C
I
C
B V
CEO
B V
ECO
Topr
Tstg
Tsol
(＊2)
t=5 Sec
Ratings
75
5
50
1
75
30
30
5
-25~+85
-40~+85
260
Unit
mW
V
mA
A
mW
mA
V
V
℃
℃
℃
Input
Output
Emitter-Collector Voltage
Operating Temperature
Storage Temperature
Lead Soldering Temperature (*2)
(1/16 inch form body for 5 seconds)
(＊1) tw=100
μsec.
,
T=10 msec.
2
Revision
Copyright ©
: (4)
LifecyclePhase:
Release Date:
Rev4
2010, Everlight All Rights Reserved. Release Date : Feb.25.2013. Issue No: DRX-0000139
www.everlight.com
Expired Period: Forever
DATASHEET
ITR8102
Electro-Optical Characteristics (Ta=25℃)
Parameter
Forward Voltage
Reverse Current
Peak Wavelength
View Angle
Dark Current
C-E Saturation
Voltage
Collect Current
Transfer
Characteristics Rise time
Fall time
Symbol
V
F
I
R
λ
P
21/2
I
CEO
V
CE
(sat)
I
C
(ON)
t
r
t
f
Min.
Typ.
---
---
---
---
---
---
0.9
---
---
1.2
---
940
60
---
---
---
Max.
1.5
10
---
---
100
0.4
15
Unit
V
μA
nm
Deg
nA
V
mA
μsec
μsec
Conditions
I
F
=20mA
V
R
=5V
I
F
=20mA
I
F
=20mA
V
CE
=20V,Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
V
CE
=5V I
F
=20mA
V
CE
=5V
I
C
=1mA
R
L
=1K
Input
Output
15
15
---
---
3
Revision
Copyright ©
: (4)
LifecyclePhase:
Release Date:
Rev4
2010, Everlight All Rights Reserved. Release Date : Feb.25.2013. Issue No: DRX-0000139
www.everlight.com
Expired Period: Forever
DATASHEET
ITR8102
Typical Electrical/Optical/Characteristics Curves for IR
Forward Current vs. Ambient Temperature
Spectral Distribution
Peak Emission Wavelenght
vs.
Ambient Temperature
Forward Current
vs. Forward Voltage
4
Revision
Copyright ©
: (4)
LifecyclePhase:
Release Date:
Rev4
2010, Everlight All Rights Reserved. Release Date : Feb.25.2013. Issue No: DRX-0000139
www.everlight.com
Expired Period: Forever
DATASHEET
ITR8102
Forward Current
vs.
Ambient Temperature
Relative Radiant Intensity
vs.
Angular Displacement
Typical Electro/Optical/Characteristics Curves for PT
Collector Power Dissipation vs. Ambient Temperature
Spectral Sensitivity
5
Revision
Copyright ©
: (4)
LifecyclePhase:
Release Date:
Rev4
2010, Everlight All Rights Reserved. Release Date : Feb.25.2013. Issue No: DRX-0000139
www.everlight.com
Expired Period: Forever
京公网安备 11010802033920号
EEWORLD
