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ATV50C181J-HF

Description
ESD Suppressors / TVS Diodes 5000W 180V UNIDIRECTION AECQ101
CategoryCircuit protection   
File Size117KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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ATV50C181J-HF Overview

ESD Suppressors / TVS Diodes 5000W 180V UNIDIRECTION AECQ101

ATV50C181J-HF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerComchip Technology
Product CategoryESD Suppressors / TVS Diodes
RoHSIn Transition
PolarityUnidirectional
Number of Channels1 Channel
Termination StyleSMD/SMT
Breakdown Voltage200 V
Working Voltage180 V
Clamping Voltage291.6 V
Ipp - Peak Pulse Current17.1 A
Cd - Diode Capacitance-
Package / CaseDO-214AB-2
Pd - Power Dissipation6.5 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
QualificationAEC-Q101
PackagingReel
NumOfPackaging1
Factory Pack Quantity3000
Vf - Forward Voltage3.5 V
SMD Transient Voltage Suppressor
ATV50C110-HF Thru. ATV50C441-HF
Working Voltage: 11 to 440 Volts
Peak Pulse Power: 5000 Watts
RoHS Device
Halogen Free
SMC/DO-214AB
Features
- Glass passivated chip.
- 5000W peak pulse power capability with a 10/1000µs
waveform, repetitive rate (duty cycle):0.01%
- Low leakage.
- Uni and Bidirectional unit.
- Excellent clamping capability.
- Comply with AEC-Q101
- Very fast response time.
- UL recognized file # E349157
R
0.280(7.02)
0.260(6.52)
0.126(3.16)
0.114(2.86)
0.245(6.15)
0.220(5.52)
0.320(8.02)
0.305(7.64)
0.012(0.30)
0.006(0.15)
0.103(2.59)
0.079(1.98)
0.060(1.51)
0.030(0.75)
0.008(0.20)
0.000(0.00)
Mechanical Data
- Case: DO-214AB/SMC molded plastic.
- Epoxy: UL 94V-0 rate flame retardant
- Lead: Solderable per MIL-STD-750, method 2026.
- Polarity: Color band denoted cathode
end except bipolar.
- Mounting position: Any
- Weight:
0.230 gram
(approx.)
Dimensions in inches and (millimeter)
Circuit Diagram
Bi-directional
Uni-directional
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Peak power dissipation with a 10/1000μs
waveform (Note 1)
Peak pulse current with a 10/1000μs
waveform (Note 1)
Power dissipation on infinite heatsink
at T
L
=75°C
Peak forward surge current, 8.3ms single
half sine-wave unidirectional only (Note 2)
Maximum instantaneous forward voltage
at 100A for unidirectional only (Note 3)
Operation junction and storage
temperature range
Symbol
P
PP
I
PP
P
D
I
FSM
V
F
T
J
, T
STG
Value
5000
See Next Table
6.5
300
3.5/5.0
-55 to +150
Units
W
A
W
A
V
°C
Notes: 1. Non-repetitive current pulse, per Fig.5 and derated above T
A
=25°C, per Fig.1
2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
3. V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
Company reserves the right to improve product design , functions and reliability without notice.
AQW-JTV04
REV:B
Page 1
Comchip Technology CO., LTD.
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