Ordering number : EN8054A
2SK3816
N-Channel Power MOSFET
60V, 40A, 26m
Ω
, TO-262-3L/TO-263-2L
Features
•
•
•
http://onsemi.com
ON-resistance RDS(on)1=20m
Ω
(typ.)
Input capacitance Ciss=1780pF(typ.)
4V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
60
±20
40
160
1.65
50
Unit
V
V
A
A
W
W
Continued on next page.
Package Dimensions
unit : mm (typ)
7537-001
2SK3816-1E
10.0
1.2
4.5
1.3
8.0
1.75
Package Dimensions
unit : mm (typ)
7535-001
2SK3816-DL-1E
10.0
4
1.2
4.5
1.3
8.0
1.75
7.9
5.3
1.35
7.9
0.9
3.0
3.0
1.4
9.2
13.4
9.2
5.3
0.254
1.47
1.27
13.08
0.8
0.5
2.54
1 2 3
2.4
1
2 3
1.27
0.8
2.54
2.4
0.5
2.54
2.54
TO-262-3L
0 to 0.25
1 : Gate
2 : Drain
3 : Source
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
Ordering & Package Information
Device
2SK3816-1E
2SK3816-DL-1E
Package
TO-262-3L
(TO-262)
TO-263-2L
(SC-83, TO-263)
Shipping
50pcs./tube
Pb Free
800pcs./reel
memo
Marking
K3816
LOT No.
Electrical Connection
2, 4
Packing Type : DL
DL
1
3
Semiconductor Components Industries, LLC, 2013
June, 2013
61913 TKIM TC-00002888/D2404QA TSIM TB-00000610 No.8054-1/7
0.9
2SK3816
Continued from preceding page.
Parameter
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
Tch
Tstg
EAS
IAV
Conditions
Ratings
150
-
-55 to +150
60
40
Unit
°C
°C
mJ
A
Note :
*1
VDD=20V, L=50
μ
H, IAV=40A (Fig.1)
*2
L
≤
50
μ
H, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=40A, VGS=0V
VDS=30V, VGS=10V, ID=40A
See Fig.2
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=20A
ID=20A, VGS=10V
ID=20A, VGS=4V
Ratings
min
60
1
±10
1.2
16
27
20
28
1780
266
197
16.5
160
160
160
40
6.5
11.5
1.05
1.5
26
40
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
D
≥50Ω
RG
G
L
DUT
2SK3816
10V
0V
VDD=30V
VIN
VIN
D
VDD
PW=10μs
D.C.≤1%
G
ID=20A
RL=1.5Ω
VOUT
10V
0V
50Ω
S
2SK3816
P.G
50Ω
S
No.8054-2/7
2SK3816
50
45
ID -- VDS
Tc=25
°
C
50
ID -- VGS
Tc=
--25
°
C
1.5
2.0
40
6V
8V
40
4V
35
Drain Current, ID -- A
Drain Current, ID -- A
35
30
25
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
30
25
20
15
10
5
0
0
0.5
1.0
2.5
3.0
3.5
VGS=3V
25
°
C
Tc
=7
5
°
C
--25
°
C
4.0
25
°
C
4.5
IT07813
150
IT07815
1.5
IT07817
30
IT07819
Drain to Source Voltage, VDS -- V
70
IT07812
60
Gate to Source Voltage, VGS -- V
RDS(on) -- VGS
ID=20A
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
60
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
50
50
40
40
30
20
I D=
A,
4V
S=
VG
30
Tc=75
°
C
20
25
°
C
--25
°
C
20
20
I D=
=10V
VGS
A,
10
0
2
3
4
5
6
7
8
9
10
IT07814
10
0
--50
--25
0
25
50
75
100
125
Gate to Source Voltage, VGS -- V
7
Case Temperature, Tc --
°C
100
7
5
3
2
|
y
fs
|
-- ID
IF -- VSD
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
5
3
VDS=10V
Forward Current, IF -- A
2
25
10
7
5
3
2
1.0
7
5
3
0.1
2
3
5
7 1.0
2
°
C
5
°
C
--2
=
°
C
Tc
75
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.3
Tc=7
5
°
C
25
°
C
--25
°
C
3
5
7 10
2
3
5
7
0.6
0.9
1.2
Drain Current, ID -- A
5
3
IT07816
5
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=30V
VGS=10V
Ciss, Coss, Crss -- pF
3
2
Switching Time, SW Time -- ns
2
Ciss
100
7
5
tf
1000
7
5
3
2
tr
3
2
td(on)
Coss
Crss
10
7
5
0.1
100
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0
5
10
15
20
25
Drain Current, ID -- A
IT07818
Drain to Source Voltage, VDS -- V
No.8054-3/7
75
°
C
10
V
VDS=10V
2SK3816
10
9
VGS -- Qg
VDS=30V
ID=40A
Drain Current, ID -- A
ASO
5
3
2
100
7
5
3
2
10
7
5
3
2
IDP=160A(PW≤10μs)
ID=40A
Gate to Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
1m
10m
s
100
s
ms
DC
ope
rati
on
100
10
μ
s
μ
s
Operation in
1.0
this area is
7
limited by RDS(on).
5
3
2
0.1
7
5
3
Tc=25°C
2
Single pulse
0.01
2 3
5 7 1.0
2 3
0.1
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.0
IT07820
60
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain to Source Voltage, VDS -- V
5 7 100
IT17035
PD -- Tc
Allowable Power Dissipation, PD -- W
1.65
1.5
50
40
1.0
30
20
0.5
10
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Amibient Tamperature, Ta --
°C
IT07811
Case Tamperature, Tc --
°C
IT07822
No.8054-4/7
2SK3816
Outline Drawing
2SK3816-DL-1E
Mass (g) Unit
1.5
mm
* For reference
Land Pattern Example
Unit: mm
No.8054-5/7
DSP and ARM Processors
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