MOSFET 60V N Channel Mosfet
Parameter Name | Attribute value |
Product Attribute | Attribute Value |
Manufacturer | Taiwan Semiconductor |
Product Category | MOSFET |
RoHS | Details |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-252-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 66 A |
Rds On - Drain-Source Resistance | 6.3 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 81 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 44.6 W |
Channel Mode | Enhancement |
Packaging | Cut Tape |
Packaging | MouseReel |
Packaging | Reel |
Transistor Type | 1 N-Channel |
Fall Time | 43 ns |
NumOfPackaging | 3 |
Rise Time | 19 ns |
Factory Pack Quantity | 2500 |
Typical Turn-Off Delay Time | 85 ns |
Typical Turn-On Delay Time | 25 ns |
Unit Weight | 0.139332 oz |