numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
30A
di
/
dt
≤
700A/µs
VR
≤
500
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
-5
0.9
0.7
0.5
Note:
PDM
6-2004
0.3
SINGLE PULSE
t1
t2
050-7026 Rev C
0.1
0.05
10
-4
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction
temp. (°C)
RC MODEL
80
APT5016BFLL_SFLL
8V
15 &10V
7.5V
7V
I
D
, DRAIN CURRENT (AMPERES)
0.0174
0.00401F
60
Power
(watts)
0.143
0.00641F
40
6.5V
0.219
Case temperature. (°C)
0.158F
20
6V
5.5V
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
NORMALIZED TO
V
= 10V @ 15A
GS
I
D
, DRAIN CURRENT (AMPERES)
80
1.15
1.1
1.05
VGS=20V
1.0
0.95
0.9
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
60
VGS=10V
40
TJ = +125°C
TJ = +25°C
0
TJ = -55°C
20
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
30
25
20
15
10
5
0
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
V
D
1.15
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
I
D
, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
0.90
0.85
-50
25
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
= 15A
= 10V
2.0
1.5
1.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7026 Rev C
6-2004
Typical Performance Curves
120
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10,000
5,000
APT5016BFLL_SFLL
Ciss
C, CAPACITANCE (pF)
1,000
Coss
100µS
10
100
Crss
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10mS
1
5 10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
16
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = 30
200
100
50
TJ =+150°C
TJ =+25°C
14
12
10
8
6
4
2
10 20 30 40 50 60 70 80 90 100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
60
t
d(off)
50
0
0
VDS=100V
VDS=250V
VDS=400V
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
50
V
DD
G
= 333V
R
= 5Ω
T = 125°C
J
L = 100µH
t
d(on)
and t
d(off)
(ns)
40
30
20
10
0
V
DD
G
= 333V
40
t
r
and t
f
(ns)
t
f
R
= 5Ω
T = 125°C
J
L = 100µH
30
20
10
0
t
r
t
d(on)
0
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
10
20
30
40
50
30
40
50
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
1000
SWITCHING ENERGY (µJ)
V
I
DD
0
10
20
1000
= 333V
= 333V
R
= 5Ω
D
J
= 30A
SWITCHING ENERGY (µJ)
800
T = 125°C
J
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
L = 100µH
E
ON
includes
diode reverse recovery.
E
off
800
600
400
200
0
600
E
on
400
E
on
6-2004
200
E
off
050-7026 Rev C
0
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
10
20
30
40
50
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT5016BFLL_SFLL
Gate Voltage
10 %
TJ = 125 C
t
d(on)
t
r
Drain Current
90%
Gate Voltage
T = 125 C
J
t
d(off)
t
d(off)
Drain Voltage
90%
5%
Drain Voltage
Switching Energy
90%
5%
Switching Energy
10 %
tf
10%
0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V
DD
I
D
V
DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
[i=s] This post was last edited by The Most Handsome on 2021-12-23 11:52[/i]After seeing the post from the administrator lady, of course I wanted to join in the fun.
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