FP35R12KT4 datasheet, PDF - EEWORLD Datasheet

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FP35R12KT4: DescriptionIGBT Modules IGBT-MODULE; CategoryDiscrete semiconductor The transistor; File Size826KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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FP35R12KT4 Overview

IGBT Modules IGBT-MODULE

FP35R12KT4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-XUFM-X23
Contacts	23
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	ISOLATED
Maximum collector current (IC)	35 A
Collector-emitter maximum voltage	1200 V
Configuration	COMPLEX
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X23
Number of components	7
Number of terminals	23
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	210 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal off time (toff)	620 ns
Nominal on time (ton)	210 ns
VCEsat-Max	2.25 V
Base Number Matches	1

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技术信息/TechnicalInformation

IGBT-模块

IGBT-modules

FP35R12KT4

初步数据

PreliminaryData

CES

1200

210

+/-20

min.

= 35 A, V

= 15 V

= 35 A, V

= 15 V

= 35 A, V

= 15 V

= 1,20 mA, V

= V

, T

= 25°C

= -15 V ... +15 V

= 25°C

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

= 1200 V, V

= 0 V, T

= 25°C

= 0 V, V

= 20 V, T

= 25°C

= 35 A, V

= 600 V

= ±15 V

Gon

= 27

Ω

= 35 A, V

= 600 V

= ±15 V

Gon

= 27

Ω

= 35 A, V

= 600 V

= ±15 V

Goff

= 27

Ω

= 35 A, V

= 600 V

= ±15 V

Goff

= 27

Ω

= 25°C

= 125°C

= 150°C

= 25°C

= 125°C

= 150°C

= 25°C

= 125°C

= 150°C

= 25°C

= 125°C

= 150°C

= 25°C

= 125°C

= 150°C

CE sat

GEth

Gint

ies

res

CES

GES

d on

5,2

typ.

1,85

2,15

2,25

5,8

0,27

0,0

2,00

0,07

0,16

0,17

0,03

0,04

0,33

0,43

0,45

0,08

0,15

0,17

3,90

5,10

5,60

2,10

3,10

3,40

130

0,335

150

max.

2,25

µC

Ω

µs

EconoPIM™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode

EconoPIM™2modulewithtrench/fieldstopIGBT4andEmitterControlled4diode

IGBT,逆变器/IGBT,Inverter

集电极－发射极电压

Collector-emittervoltage

连续集电极直流电流

ContinuousDCcollectorcurrent

集电极重复峰值电流

Repetitivepeakcollectorcurrent

总功率损耗

Totalpowerdissipation

栅极－发射极峰值电压

Gate-emitterpeakvoltage

最大额定值/MaximumRatedValues

= 25°C

= 100°C, T

vj max

= 175°C

= 1 ms

= 25°C, T

vj max

= 175°C

C nom

CRM

tot

GES

特征值/CharacteristicValues

集电极－发射极饱和电压

Collector-emittersaturationvoltage

栅极阈值电压

Gatethresholdvoltage

栅极电荷

Gatecharge

内部栅极电阻

Internalgateresistor

输入电容

Inputcapacitance

反向传输电容

Reversetransfercapacitance

集电极-发射极截止电流

Collector-emittercut-offcurrent

栅极-发射极漏电流

Gate-emitterleakagecurrent

开通延迟时间(电感负½½)

Turn-ondelaytime,inductiveload

上升时间(电感负½½)

Risetime,inductiveload

关断延迟时间(电感负½½)

Turn-offdelaytime,inductiveload

下降时间(电感负½½)

Falltime,inductiveload

开通损耗½量(每脉冲)

Turn-onenergylossperpulse

关断损耗½量(每脉冲）

Turn-offenergylossperpulse

短路数据

SCdata

结－外壳热阻

Thermalresistance,junctiontocase

外壳－散热器热阻

Thermalresistance,casetoheatsink

在开关状态下温度

Temperatureunderswitchingconditions

preparedby:AS

approvedby:RS

6,4

1,0

100

d off

= 35 A, V

= 600 V, L

= 20 nH

= 25°C

= ±15 V, di/dt = 1100 A/µs (T

= 150°C) T

= 125°C

Gon

= 27

Ω

= 150°C

= 35 A, V

= 600 V, L

= 20 nH

= 25°C

= ±15 V, du/dt = 3600 V/µs (T

= 150°C) T

= 125°C

Goff

= 27

Ω

= 150°C

≤

15 V, V

= 900 V

CEmax

= V

CES

-L

sCE

·di/dt

每个IGBT/perIGBT

Paste

=1W/(m·K)/λ

grease

=1W/(m·K)

dateofpublication:2013-11-04

revision:2.0

≤

10 µs, T

= 150°C

off

thJC

thCH

vj op

-40

0,72 K/W

K/W

°C

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