TCDT1120, TCDT1120G
Vishay Semiconductors
Optocoupler, Phototransistor Output
FEATURES
NC
6
C
5
E
4
• High common mode rejection
• Four CTR groups available
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
1
A (+)
17201_6
2
C (–)
3
NC
V
D E
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Reinforced isolation provides circuit protection against
electrical shock (safety class II)
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage
≤
300 V
- for appl. class I - III at mains voltage
≤
600 V
according to DIN EN 60747-5-5
17201_4
DESCRIPTION
The TCDT1120(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared emitting
diode in a 6 lead plastic dual in line package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI IEC 60950 IEC 60065
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO
• cUL tested to CSA 22.2 bulletin 5A
ORDER INFORMATION
PART
TCDT1120
TCDT1122
TCDT1123
TCDT1124
TCDT1120G
TCDT1122G
TCDT1123G
TCDT1124G
(1)
REMARKS
CTR > 40 %, DIP-6
CTR 63 % to 125 %, DIP-6
CTR 100 % to 200 %, DIP-6
CTR 160 % to 320 %, DIP-6
CTR > 40 %, DIP-6
CTR 63 % to 125 %, DIP-6
CTR 100 % to 200 %, DIP-6
CTR 160 % to 320 %, DIP-6
Note
(1)
G = leadform 10.16 mm; G is not marked on the body.
Document Number: 83532
Rev. 1.7, 28-Oct-09
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
789
TCDT1120, TCDT1120G
Vishay Semiconductors
Optocoupler, Phototransistor Output
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
(2)
2 mm from case, t
≤
10 s
t=1s
V
ISO
P
tot
T
amb
T
stg
T
sld
5000
250
- 55 to + 100
- 55 to + 125
260
V
RMS
mW
°C
°C
°C
t
p
/T = 0.5, t
p
≤
10 ms
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
70
7
50
100
150
125
V
V
mA
mA
mW
°C
t
p
≤
10 μs
V
R
I
F
I
FSM
P
diss
T
j
5
60
3
100
125
V
mA
A
mW
°C
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector ermitter cut-off current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
(1)
(1)
TEST CONDITION
I
F
= 50 mA
V
R
= 0 V, f = 1 MHz
I
C
= 100
μA
I
C
= 1 mA
I
E
= 100 μA
V
CE
= 20 V, I
F
= 0 A
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA, R
L
= 100
Ω
f = 1 MHz
SYMBOL
V
F
C
j
V
CBO
V
CEO
V
ECO
I
CEO
V
CEsat
f
c
C
k
MIN.
TYP.
1.25
50
MAX.
1.6
UNIT
V
pF
V
V
V
90
90
7
150
0.3
110
0.3
nA
V
kHz
pF
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
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790
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83532
Rev. 1.7, 28-Oct-09
TCDT1120, TCDT1120G
Optocoupler, Phototransistor Output
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
TCDT1120
TCDT1120G
TCDT1122
V
CE
= 5 V, I
F
= 1 mA
TCDT1122G
TCDT1123
TCDT1123G
TCDT1124
I
C
/I
F
TCDT1124G
TCDT1120
TCDT1120G
TCDT1122
V
CE
= 5 V, I
F
= 10 mA
TCDT1122G
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
10
15
30
60
40
63
100
160
125
200
320
TYP.
MAX.
UNIT
%
%
%
%
%
%
%
%
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
(1)
(1)
TEST CONDITION
SYMBOL
I
F
P
diss
V
IOTM
T
si
MIN.
TYP.
MAX.
130
265
6
150
UNIT
mA
mW
kV
°C
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
100 %, t
test
= 1 s
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IO
= 500 V
Insulation resistance
V
IO
= 500 V, T
amb
≤
100 °C
V
IO
= 500 V, T
amb
≤
150 °C
(construction test only)
SYMBOL
V
pd
V
IOTM
V
pd
R
IO
R
IO
R
IO
MIN.
1.6
6
1.3
10
12
10
11
10
9
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
Document Number: 83532
Rev. 1.7, 28-Oct-09
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
791
TCDT1120, TCDT1120G
Vishay Semiconductors
Optocoupler, Phototransistor Output
300
250
200
150
100
I
si
(mA)
50
0
0
95 10934
V
IOTM
P
si
(mW)
t
1
, t
2
t
3
, t
4
t
test
t
stres
V
Pd
V
IOWM
V
IORM
= 1 to 10 s
=1s
= 10 s
= 12 s
0
25
50
75
100 125 150 175 200
13930
t
3
t
test
t
4
t
1
t
Tr
= 60 s
t
2
t
stres
t
T
amb
- Ambeint Temperature(°C)
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
TCDT1120
TCDT1120G
Current time
V
S
= 5 V, R
L
= 100
Ω,
(see figure 3)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
TCDT1120
TCDT1120G
Delay time
V
S
= 5 V, R
L
= 100
Ω,
(see figure 3)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
TCDT1120
TCDT1120G
Rise time
V
S
= 5 V, R
L
= 100
Ω,
(see figure 3)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
TCDT1120
TCDT1120G
Storage time
V
S
= 5 V, R
L
= 100
Ω,
(see figure 3)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
TCDT1120
TCDT1120G
Fall time
V
S
= 5 V, R
L
= 100
Ω,
(see figure 3)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
SYMBOL
I
F
I
F
I
F
t
D
t
D
t
D
t
r
t
r
t
r
t
s
t
s
t
s
t
f
t
f
t
f
MIN.
TYP.
10
10
10
2.5
2.8
2
3
4.2
4
0.3
0.3
0.3
3.7
4.7
4.7
MAX.
UNIT
mA
mA
mA
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
www.vishay.com
792
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83532
Rev. 1.7, 28-Oct-09
TCDT1120, TCDT1120G
Optocoupler, Phototransistor Output
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
TCDT1120
TCDT1120G
Turn-on time
V
S
= 5 V, R
L
= 100
Ω,
(see figure 3)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
TCDT1120
TCDT1120G
Turn-off time
V
S
= 5 V, R
L
= 100
Ω,
(see figure 3)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
TCDT1120
TCDT1120G
Turn-on time
V
S
= 5 V, R
L
= 1 kΩ, (see figure 4)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
TCDT1120
TCDT1120G
Turn-off time
V
S
= 5 V, R
L
= 1 kΩ, (see figure 4)
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
SYMBOL
t
on
t
on
t
on
t
off
t
off
t
off
t
on
t
on
t
on
t
off
t
off
t
off
MIN.
TYP.
5.5
7
6
4
5
5
16.5
21.5
20
22.5
37.5
50
MAX.
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
I
F
0
I
C
100 %
90 %
I
F
t
p
t
I
F
+5V
I
C
= 2 mA; adjusted through
input amplitude
0
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
t
r
t
d
t
on
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
10 %
0
t
Channel I
Channel II
50
Ω
100
Ω
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
95 10804
Fig. 3 - Switching Times
Fig. 4 - Test Circuit, Non-Saturated Operation
Document Number: 83532
Rev. 1.7, 28-Oct-09
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
793
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