EEWORLDEEWORLDEEWORLD

Part Number

Search

M12JZ47

Description
AC POWER CONTROL APPLICATIONS
File Size196KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Compare View All

M12JZ47 Overview

AC POWER CONTROL APPLICATIONS

SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
AC POWER CONTROL APPLICATIONS
Unit: mm
l
Repetitive Peak off−State Voltage
l
R.M.S On−State Current
l
High Commutating (dv / dt)
l
Isolation Voltage
: V
Isol
=
1500V
AC
: V
DRM
= 400, 600V
: I
T (RMS)
=
12A
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SM12GZ47
SM12GZ47A
SM12JZ47
SM12JZ47A
SYMBOL
RATING
400
V
DRM
600
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
FGM
I
GM
T
j
T
stg
V
Isol
2
UNIT
V
R. M. S. On−tate Current
(Full Sine Waveform TC = 72°C)
Peak One Cylce Surge On−State
Current (Non−Repetitive)
I t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
2
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
−40~125
−40~125
1500
A
A
A s
A / µs
W
W
V
A
°C
°C
V
2
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
13−10H1A
Note 1: di / dt test condition
V
DRM
= 0.5 × Rated
I
TM
17A
t
gw
10µs
t
gr
250ns
i
gp
= I
GT
× 2.0
1
2001-07-10

M12JZ47 Related Products

M12JZ47 SM12GZ47 SM12GZ47A SM12JZ47 SM12JZ47A
Description AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS
Is it lead-free? - Contains lead Contains lead - Contains lead
Is it Rohs certified? - incompatible incompatible incompatible incompatible
Maker - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts - 3 3 3 3
Reach Compliance Code - unknow unknow unknow unknow
Shell connection - ISOLATED ISOLATED ISOLATED ISOLATED
Configuration - SINGLE SINGLE SINGLE SINGLE
Critical rise rate of commutation voltage - minimum value - 10 V/us 4 V/us 10 V/us 4 V/us
Maximum DC gate trigger current - 30 mA 20 mA 30 mA 20 mA
Maximum DC gate trigger voltage - 1.5 V 1.5 V 1.5 V 1.5 V
Maximum holding current - 50 mA 50 mA 50 mA 50 mA
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum leakage current - 0.02 mA 0.02 mA 0.02 mA 0.02 mA
Number of components - 1 1 1 1
Number of terminals - 3 3 3 3
Maximum operating temperature - 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature - -40 °C -40 °C -40 °C -40 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current - 12 A 12 A 12 A 12 A
Maximum repetitive peak off-state leakage current - 20 µA 20 µA 20 µA 20 µA
Off-state repetitive peak voltage - 400 V 400 V 600 V 600 V
surface mount - NO NO NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type - TRIAC TRIAC TRIAC TRIAC

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号