SIGC12T120L datasheet, PDF - EEWORLD Datasheet

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SIGC12T120L: DescriptionIGBT3 Chip; CategoryDiscrete semiconductor The transistor; File Size66KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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SIGC12T120L Overview

IGBT3 Chip

SIGC12T120L Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	UNCASED CHIP, R-XUUC-N2
Contacts	2
Reach Compliance Code	compli
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUUC-N2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	500 ns
Nominal on time (ton)	300 ns
Base Number Matches	1

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SIGC12T120L

IGBT Chip

FEATURES:

•

1200V Trench & Field Stop technology

•

120µm chip

•

low turn-off losses

•

short tail current

•

positive temperature coefficient

•

easy paralleling

This chip is used for:

•

power module

Applications:

•

drives

Chip Type

SIGC12T120L

1200V

Die Size

3.54 x 3.5 mm

Package

sawn on foil

Ordering Code

Q67050-

A4269-A101

MECHANICAL PARAMETER:

Raster size

Emitter pad size

Gate pad size

Area total / active

Thickness

Wafer size

Flat position

Max.possible chips per wafer

Passivation frontside

Emitter metallization

Collector metallization

Die bond

Wire bond

Reject Ink Dot Size

Recommended Storage Environment

3.54 x 3.5

2.03 x 2.03

1.1 x 0.7

12.4 / 6.9

120

150

1200 pcs

Photoimide

3200 nm AlSiCu

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

electrically conductive glue or solder

Al, <500µm

∅

0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

µm

grd

Edited by INFINEON Technologies AI PS DD HV3, L7621B, Edition 2, 04.09.03

SIGC12T120L Related Products

	SIGC12T120L	Q67050-A4269-A101
Description	IGBT3 Chip	IGBT3 Chip

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