The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
| Parameter Name | Attribute value |
| Maker | Motorola ( NXP ) |
| package instruction | FLATPACK, R-CDFP-F2 |
| Contacts | 2 |
| Manufacturer packaging code | CASE 465C-02 |
| Reach Compliance Code | unknow |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 65 V |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| highest frequency band | S BAND |
| JESD-30 code | R-CDFP-F2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 315 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| MRF5S21130SR3 | MRF5S21130 | MRF5S21130S | MRF5S21130R3 | |
|---|---|---|---|---|
| Description | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| package instruction | FLATPACK, R-CDFP-F2 | FLANGE MOUNT, R-CDFM-F2 | FLATPACK, R-CDFP-F2 | NI-880, CASE 465B-03, 2 PIN |
| Reach Compliance Code | unknow | unknow | unknow | unknow |
| Shell connection | SOURCE | SOURCE | SOURCE | SOURCE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 65 V | 65 V | 65 V | 65 V |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| highest frequency band | S BAND | S BAND | S BAND | S BAND |
| JESD-30 code | R-CDFP-F2 | R-CDFM-F2 | R-CDFP-F2 | R-CDFM-F2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLATPACK | FLANGE MOUNT | FLATPACK | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 315 W | 315 W | 315 W | 315 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal form | FLAT | FLAT | FLAT | FLAT |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
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