N-Channel Power MOSFETs 200V, 9.3A, 0.30з
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 94 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (Abs) (ID) | 9.3 A |
| Maximum drain current (ID) | 9.3 A |
| Maximum drain-source on-resistance | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 82 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRF630NS | IRF630NL | IRF630N | |
|---|---|---|---|
| Description | N-Channel Power MOSFETs 200V, 9.3A, 0.30з | N-Channel Power MOSFETs 200V, 9.3A, 0.30з | N-Channel Power MOSFETs 200V, 9.3A, 0.30з |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 94 mJ | 94 mJ | 94 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | 200 V | 200 V |
| Maximum drain current (Abs) (ID) | 9.3 A | 9.3 A | 9.3 A |
| Maximum drain current (ID) | 9.3 A | 9.3 A | 9.3 A |
| Maximum drain-source on-resistance | 0.3 Ω | 0.3 Ω | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-262AA | TO-220AB |
| JESD-30 code | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | IN-LINE | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 82 W | 82 W | 82 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | - |
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